Effect of network topology on nanocluster film transport

R.W. Rendell1, M.G. Ancona1, W. Kruppa1, E.E. Foos1, A.W. Snow1, D. Park1, J.B. Boos1
1Naval Research Laboratory, Inc., Washington D.C., DC, USA

Tóm tắt

The effects of network topology on electron transport is studied using Monte Carlo simulations of tunnel junction networks with transport governed by Coulomb blockade. Both the threshold voltage shift and the nonlinearity of the I-V curves are sensitive to lateral fluctuations of the conduction paths due to random voids. The nonlinearity is found to be maximized for aspect ratios of the network of unity or larger and for random void networks with 50% horizontal connections. Comparisons are made with Au nanocluster I-V measurements.

Từ khóa

#Network topology #Gold #Electrons #Threshold voltage #Electrodes #Nanoscale devices #Temperature distribution #Temperature sensors #Temperature dependence #Snow

Tài liệu tham khảo

10.1063/1.124060 10.1126/science.290.5494.1131 10.1103/PhysRevLett.71.3198 10.1063/1.120568 wasshuber, 0 10.1063/1.115090 10.1103/PhysRevLett.87.186807 10.1103/PhysRevB.64.033408