Effect of dopants in the spin-on glass layer on the bandgap shift in GaAs/AlGaAs and InGaAs/AlGaAs intermixed quantum wells

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 145-148
R.W. van der Heijden1, L. Fu2, H.H. Tan2, C. Jagadish2, L.V. Dao3, M. Gal3
1Eindhovan University of Technology, Netherlands
2Department of Electronic Materials Engineering, Research School of Physical Science and Engineering, Australian National University, Canberra, Australia
3School of Physics, University of New South Wales, Sydney, Australia

Tóm tắt

Impurity free vacancy disordering (IFVD) is induced in both GaAs/AlGaAs and InGaAs/AlGaAs QWs using undoped, Ga-doped and P-doped spin-on glass encapsulant layers. IFVD has been studied for different annealing and pre-baking temperatures, using low temperature photoluminescence (PL). The P-doped and undoped silica layers behave similarly in promoting IFVD, inducing large energy shifts. The Ga-doped silica layer suppresses IFVD, which is explained by the reduction of Ga outdiffusion from the QW structure into the oxide layer.

Từ khóa

#Glass #Photonic band gap #Gallium arsenide #Indium gallium arsenide #Silicon compounds #Rapid thermal annealing #Plasma temperature #Temperature distribution #Australia #Impurities

Tài liệu tham khảo

10.1049/el:19950911 10.1063/1.126102 10.1063/1.118549 10.1109/2944.720472 10.1063/1.125601 10.1063/1.105748 10.1063/1.364295 10.1063/1.114060 10.1049/el:19921062 10.1063/1.123106 0
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COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

145-148

Thông tin tác giả