Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals

Journal of Electronic Materials - Tập 43 - Trang 2688-2693 - 2014
T. S. Jeong1, J. H. Yu1, H. S. Mo1, T. S. Kim1, K. Y. Lim1, C. J. Youn1, K. J. Hong2, H. S. Kim3
1Semiconductor Physics Research Center (SPRC), School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, South Korea
2Department of Physics, Chosun University, Gwangju, South Korea
3Division of Microelectronics and Display Technology, Regional Innovation Center for Next Generation Industrial Radiation Technology, Wonkwang University, Iksan, South Korea

Tóm tắt

A P-doped ZnO surface layer on undoped ZnO wafers was prepared by phosphorus (P) ion implantation. Hall effect measurement revealed p-type conduction in such layers annealed at 800°C. This indicates that acceptor levels are present in P-doped ZnO, even though the ZnO is still n-type. Micro-Raman scattering in −z(xy)z geometry was conducted on P-implanted ZnO. The E 2 high mode shift observed toward the high-energy region was related to compressive stress as a result of P-ion implantation. This compressive stress led to the appearance of an A 1(LO) peak, which is an inactive mode. This A 1(LO) peak relaxed during thermal annealing in ambient oxygen at temperatures higher than 700°C. The P2p3/2 peak observed at 135.6 eV by x-ray photoelectron spectroscopy is associated with chemical bond formation leading to 2(P2O5) molecules. This indicates that implanted P ions substituted Zn sites in the ZnO layer. In photoluminescence spectroscopy, the P-related peaks observed at energies ranging between 3.1 and 3.5 eV originated from (A0, X) emission, because of PZn-2VZn complexes acting as shallow acceptors. The acceptor level was observed to be 126.9 meV above the valence band edge. Observation of this P-related emission indicates that ion implantation results in acceptor levels in the P-doped ZnO layer. This suggests that the P2O5 bonds are responsible for the p-type activity of P-implanted ZnO.

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Thông tin xuất bản

Journal of Electronic Materials

Tập 43

2688-2693

Thông tin tác giả