EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

Pleiades Publishing Ltd - Tập 82 - Trang 441-443 - 2005
P. G. Baranov1, I. V. Il’in1, E. N. Mokhov1, M. V. Muzafarova1, S. B. Orlinskii2, J. Schmidt2
1Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Huygens Laboratory, Department of Physics, Leiden University, Leiden, The Netherlands

Tóm tắt

It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V Si-V C)0, which have the triplet ground state. The energy level scheme and the mechanism of creating the photoinduced population inversion of the triplet sublevels of the divacancy ground state are determined. It is concluded that there is a singlet excited state through which spin polarization is accomplished, and this fact opens the possibility of detecting magnetic resonance on single divacancies.

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Pleiades Publishing Ltd

Tập 82

441-443

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