Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications
Tóm tắt
A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed based on the drift-diffusion approximation enables us to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to f/sub T//2, which is much higher than the f/sub T//10 previously estimated.
Từ khóa
#Circuit simulation #Equivalent circuits #Poisson equations #MOSFET circuits #Intrusion detection #Threshold voltage #Predictive models #Cutoff frequency #Current density #CapacitanceTài liệu tham khảo
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