Dislocations in GaAs produced by device fabrication

Solid-State Electronics - Tập 17 - Trang 799-803 - 1974
H. Hartnagel1, B.L. Weiss1
1Department of Electrical and Electronic Engineering, University of Newcastle-upon-Tyne, Durham, England

Tài liệu tham khảo

Hasegawa, 1972, Appl. Phys. Letts, 21, 107, 10.1063/1.1654290 Mitsui, 1972, Jap. J. appl. Phys., 11, 603, 10.1143/JJAP.11.603 Hartnagel, 1973, 61, 1369 Hartnagel, 1973, J. Mat. Sci., 8, 1061, 10.1007/BF00756642 Laister, 1970, Solid-St. Electron, 13, 1200, 10.1016/0038-1101(70)90131-0 B. Mullin, Private communication (1973) Van, 1960, 276 Nishida, 1973, IEEE Trans. Electron Devices, ED-20, 221, 10.1109/T-ED.1973.17632 Jones, 1965, Electrochem. Soc., 112, 908, 10.1149/1.2423729 1973, 43 Cox, 1968 Osvenskü, 1973, Sov. Phys. Solid State, 15, 661 Sazhin, 1966, Sov. Phys. Solid State, 8, 1223