A. Secroun1, Ovidiu Brinza2, André Tardieu2, Jocelyn Achard2, François Silva2, X. Bonnin2, K. De Corte3, Ans Anthonis3, Mark E. Newton4, J. Ristein5, Peter Geithner5, A. Gicquel2
1LIMHP, CNRS – Université Paris 13, France
2LIMHP-CNRS, Universite Paris 13 (France)
3HRD Research, Antwerp, Belgium
4Department of Physics, University of Warwick, UK
5Institut für Technische Physik, Universität Erlangen–Nürnberg, Germany
Tóm tắt
AbstractHigh power electronics are today a real challenge for large band gap materials. Devices as simple as switches have to work at ever higher powers and demand material with exceptional properties: in particular, a high breakdown voltage (at least a few 106 V/cm), a high mobility‐lifetime product (at least 10–3 cm2/V), and a relatively fast response. As far as diamond is concerned, only thick (100 µm) monocrystalline free‐standing films of very good quality are expected to fulfill these requirements. Today's growth techniques still create many defects within the crystal that may deteriorate its electrical properties. It is thus our concern to identify which defects are involved and to find a strategy to select films with properties best suited for our power switching applications. Here, it is shown that nitrogen impurities are one major defect that control electrical properties as soon as 1 ppb is contained in the film and that, for lower values, dislocations seem to play a role. Besides, it is shown that the choice of substrate is involved in the formation of those dislocations within the grown film. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
