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Nguyên tắc Thiết kế cho các Photodetector HgCdTe Hệ sóng hồng ngoại Cực ngắn có Hiệu suất Quang biến cao
Tóm tắt
Trong bài báo này, chúng tôi nghiên cứu các cơ chế giới hạn và tiêu chí thiết kế của các photodetector HgCdTe cho các ứng dụng hồng ngoại ngắn với hiệu suất quang biến (QE) cực cao trong cả công nghệ n-on-p và p-on-n. Các mô hình số và mô hình phân tích được áp dụng để nghiên cứu khả năng đạt được các detector eSWIR có QE cực cao cho các bước sóng hoạt động khoảng 2.0 μm, và nghiên cứu của chúng tôi cho thấy rằng bằng cách thiết kế đúng lớp hấp thụ và mật độ pha tạp, một detector như vậy có thể được chế tạo. Hơn nữa, chúng tôi chứng minh rằng thời gian sống Shockley–Read–Hall (SRH), mật độ pha tạp lớp hấp thụ và độ dày lớp hấp thụ đều ảnh hưởng đến hiệu suất quang biến, bất kể detector được sử dụng như một phần tử pixel nhỏ trong một mảng mặt phẳng hội tụ hay như một detector lớn rời rạc cho các ứng dụng cảm biến.
Từ khóa
#HgCdTe #photodetector #hiệu suất quang biến #hồng ngoại ngắn #thiết kế #lớp hấp thụTài liệu tham khảo
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