Deposition of Nanocrystalline Bi2Te3 Films Using a Modified MOCVD System

Journal of Electronic Materials - Tập 40 - Trang 635-640 - 2011
HyunWoo You1,2, Sung-Hwan Bae2, Jongman Kim3, Jin-Sang Kim1, Chan Park2,4
1Electronic Materials Center, Korea Institute of Science and Technology, Seoul, South Korea
2Department of Materials Science and Engineering, Seoul National University, Seoul, South Korea
3[school of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, USA]
4Research Institute of Advanced Materials, Seoul National University, Seoul, South Korea

Tóm tắt

Nanocrystalline Bi2Te3 films were deposited on (100) GaAs substrates using a modified metalorganic chemical vapor deposition (MOCVD) system, and the effect of growth parameters on the structural properties were investigated. The modified MOCVD system employed a mixing room for the formation of nanoparticles of Bi2Te3 by gas-phase reaction and a graphite susceptor for growth of nanoparticles on the substrate. The grown films contained many crystallites of nanosize, and large crystallites consisted of small particles a few tens of nanometer in size. This nanostructured film approach can be an economical way of producing high-performance thermoelectric films with nanostructure compared with other top-down methods.

Tài liệu tham khảo

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Thông tin xuất bản

Journal of Electronic Materials

Tập 40

635-640

Thông tin tác giả