Sự phụ thuộc của độ nhạy tia X của tinh thể đơn AgGaS2 trên các mặt (001) và (100) vào liều và độ cứng của bức xạ

Pleiades Publishing Ltd - Tập 51 - Trang 117-125 - 2022
S. M. Asadov1, S. N. Mustafaeva2, D. T. Guseinov2, K. I. Kelbaliev1, V. F. Lukichev3
1Institute of Catalysis and Inorganic Chemistry Named after Academician Murtuza Naghiyev, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
2Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
3Valiev Institute of Physics and Technology Institute, Russian Academy of Sciences, Moscow, Russia

Tóm tắt

Dữ liệu về đặc điểm nhiễu xạ tia X của các tinh thể đơn bạc thiogallate (AgGaS2) được trồng bằng phương pháp Bridgman–Stockbarger (BS) trên mặt (001) và phản ứng vận chuyển hóa học (CTR) trên mặt (100) được trình bày. Hệ số dẫn điện tia X của AgGaS2 ở nhiệt độ 298 K dao động trong khoảng 0.97–10.63 và 0.22–3.20 min/R cho các mẫu được trồng bằng phương pháp BS và CTR, tương ứng, tại độ cứng bức xạ hiệu quả $${{V}_{a}}$$ = 25 đến 50 keV và tỷ lệ liều $$E$$ = 0.75–78.05 R/phút. Sự phụ thuộc của dòng điện tia X trạng thái ổn định vào liều tia X trong các tinh thể đơn AgGaS2 có tính chất dạng hàm lũy thừa.

Từ khóa

#AgGaS2 #nhiễu xạ tia X #tính chất điện #độ cứng bức xạ #phản ứng vận chuyển hóa học

Tài liệu tham khảo

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