Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements

Applied Physics Letters - Tập 70 Số 25 - Trang 3377-3379 - 1997
D. C. Look1, R. J. Molnar2
1University Research Center, Wright State University Dayton, Ohio 45435
2Lincoln Laboratory Massachusetts Institute of Technology Lexington, Massachusetts 02173

Tóm tắt

Temperature-dependent Hall-effect measurements in hydride vapor phase epitaxial GaN grown on sapphire can be well fitted over the temperature range 10–400 K by assuming a thin, degenerate n-type region at the GaN/sapphire interface. This degenerate interfacial region dominates the electrical properties below 30 K, but also significantly affects those properties even at 400 K, and can cause a second, deeper donor to falsely appear in the analysis. However, by using a two-layer Hall model, the bulk mobility and carrier concentration can be accurately ascertained.

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Applied Physics Letters

Tập 70 Số 25

3377-3379

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