Deep energy levels in CdTe and CdZnTe

Journal of Applied Physics - Tập 83 Số 4 - Trang 2121-2126 - 1998
A. Castaldini1, A. Cavallini1, Beatrice Fraboni1, Paloma Fernández2, J. Piqueras2
1INFM, Departement of Physics, University of Bologna, viale Berti Pichat 6/2, 40127 Bologna, Italy
2Departamento de Fı̀sica de Materiales, Facultad de Fisicas, Universidad Complutense de Madrid, E-28040 Madrid, Spain

Tóm tắt

The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed.

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Journal of Applied Physics

Tập 83 Số 4

2121-2126

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