Youngseok Lee1, Vinh Ai Dao2, S.M. Iftiquar2, Sangho Kim1, Junsin Yi2
1Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, Korea
2College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Tóm tắt
AbstractThis paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (Ea) and Urbach parameter (Eu) of n‐type hydrogenated amorphous silicon (a‐Si:H(n)) on current transport in an a‐Si:H‐based n/p TRJ has been investigated. The photoluminescence spectra and temperature‐dependent current–voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a‐Si:H‐based n/p‐type TRJ. The fabrication of a tandem cell structure consists of an a‐Si:H‐based top cell and an HIT‐type bottom cell with the a‐Si:H‐based n/p junction developed as a TRJ in between. The development of a‐Si:H‐based n/p junction as a TRJ leads to an improved a‐Si:H/HIT‐type tandem cell with a better open circuit voltage (Voc), fill factor (FF), and efficiency. The improvements in the cell performance was attributed to the wider band‐tail states in the a‐Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be Voc = 1430 mV, short circuit current density = 10.51 mA/cm2, FF = 0.65, and efficiency = 9.75%. Copyright © 2015 John Wiley & Sons, Ltd.
