Crystalline silicon solar cells with high resistivity emitter

Opto-Electronics Review - 2009
P. Pánek1, K. Drabczyk1, P. Zięba1
1Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta Str., 30-059, Cracow, Poland

Tóm tắt

AbstractThe paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

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