Cross‐Bar SnO2‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity

Advanced Electronic Materials - Tập 6 Số 1 - 2020
Zhenghao Long1, Xiaojie Xu1, Wei Yang1, Mingxiang Hu1, Dmitry V. Shtansky2, Dmitri Golberg3,4, Xiaosheng Fang1
1Department of Materials Science, Fudan University Shanghai, 200433, P. R. China
2National University of Science and Technology «MISIS», Moscow 119049, Russia
3International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, 305004 Japan
4Science and Engineering Faculty, Queensland University of Technology (QUT), Brisbane, QLD, 4000 Australia

Tóm tắt

AbstractAn cross‐bar structure is employed to design a transparent p‐n junction‐based photodetector. The device consisting of aligned n‐SnO2 and p‐NiO nanofibers is prepared via a mature electrospinning process that is suitable for commercial applications. It exhibits a high detectivity of 2.33 × 1013 Jones under 250 nm illumination at −5 V, outperforming most state‐of‐art SnO2‐based UV photodetectors. It is also endowed with a self‐powered feature due to a photovoltaic effect from the p‐n junction, resulting in a photocurrent of 10−10 A, responsivity of 30.29 mA W−1 at 0 V bias, and detectivity of 2.24 × 1011 Jones at 0.05 V bias. Moreover, the device is highly transparent (over 90% toward visible light) due to the wide band gap of photoactive materials and well‐designed cross‐bar fiber structure. Additionally, an n‐SnO2‐p‐ZnO:Ag (Ag doped ZnO) self‐powered UV photodetector is fabricated that shows good performance and give another example of the use of the cross‐bar structure.

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Advanced Electronic Materials

Tập 6 Số 1

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