Controlling heterojunction band discontinuities: A surface physicist's approach

Solid-State Electronics - Tập 29 - Trang 123-132 - 1986
G. Margaritondo1
1Department of Physics and Synchrotron Radiation Center, University of Wisconsin, Madison, WI 53706, U.S.A.

Tài liệu tham khảo

Milnes, 1972 For a recent review on surface sensitive techniques see: G. Margaritondo and J.E. Rowe, Electron spectroscopy, i in Treatise of Analytical Chemistry, I.M. Kolthoff and P.J. Elving Eds., Wiley, New York in press; and G. Margaritondo and J.H. Weaver, Photoemission spectroscopy of valence state, Method of Experimental Physics—Surfaces, R.L. Park and M.J. Lagally, Eds., Academic, New York, Ch. 4 in press Margaritondo, 1983, Solid-St. Electron., 26, 10.1016/0038-1101(83)90165-X Margaritondo, 1983, Surface Sci., 132, 469, 10.1016/0039-6028(83)90554-X Katnani, 1983, Phys. Rev., B28, 1944, 10.1103/PhysRevB.28.1944 Katnani, 1983, J. Appl. Phys., 54, 2522, 10.1063/1.332320 Perfetti, 1978, Appl. Phys. Lett., 33, 66, 10.1063/1.90458 Denley, 1979, J. Vac. Sci. Technol., 16, 1501, 10.1116/1.570232 Kraut, 1980, Phys. Rev. Lett., 44, 1620, 10.1103/PhysRevLett.44.1620 Kowalczyk, 1981, J. Vac. Sci. Technol., 20, 705, 10.1116/1.571635 Kowalczyk, 1982, J. Vac. Sci. Technol., 21, 482, 10.1116/1.571684 Waldrop, 1978, Phys. Rev. Lett., 26, 1686 Grant, 1979, Phys. Rev. Lett., 40, 656, 10.1103/PhysRevLett.40.656 Waldrop, 1981, J. Vac. Sci. Technol., 19, 573, 10.1116/1.571130 Bauer, 1978, J. Vac. Sci. Technol., 15, 1444, 10.1116/1.569804 Zurcher, 1983, J. Vac. Sci. Technol., A1, 695, 10.1116/1.571980 Bauer, 1982, J. Vac. Sci. Technol., 21, 491, 10.1116/1.571745 Mönch, 1982, J. Vac. Sci. Technol., 21, 498, 10.1116/1.571746 Mönch, 1982, Phys. Rev. Lett., 48, 512, 10.1103/PhysRevLett.48.512 Chiaradia, 1984, Phys. Rev. Lett., 52, 1246, 10.1103/PhysRevLett.52.1246 Zurcher, 1982, J. Vac. Sci. Technol., 21, 476, 10.1116/1.571683 Anderson, 1934, Solid-St. Electron., 5, 341, 10.1016/0038-1101(62)90115-6 Harrison, 1977, J. Vac. Sci. Technol., 14, 1016, 10.1116/1.569312 Kroemer, 1975, C. R. C. Critical Rev. Solid-St. Sci., 5, 555, 10.1080/10408437508243512 Frensley, 1977, Phys. Rev., B16, 2642, 10.1103/PhysRevB.16.2642 Tersoff, 1984, Phys. Rev., B30, 4874, 10.1103/PhysRevB.30.4874 Nussbaum, 1981, The theory of semiconducting junctions, Vol. 15 Von Ross, 1980, Solid-St. Electron., 23, 1069, 10.1016/0038-1101(80)90187-2 Pickett, 1977, Phys. Rev. Lett., 39, 109, 10.1103/PhysRevLett.39.109 Pickett, 1978, Phys. Rev., B18, 939, 10.1103/PhysRevB.18.939 Pollman, 1980, Festkörperprobleme, 20, 117, 10.1007/BFb0116742 Cohen, 1980, Adv. Electron. Electron Phys., 51, 1, 10.1016/S0065-2539(08)60316-9 Kroemer, 1983 Tersoff, 1984, Phys. Rev. Lett., 52, 465, 10.1103/PhysRevLett.52.465 Margaritondo, 1985, Phys. Rev. B, 31, 2526, 10.1103/PhysRevB.31.2526 Turowski, 1984, Appl. Phys. Lett., 44, 768, 10.1063/1.94911 Patella, 1984 Bean, 1984, Appl. Phys. Lett., 44, 102, 10.1063/1.94571 also J.C. Bean, J. Cryst. Growth, in press, and references therein Perfetti, 1981, Phys. Rev., B24, 6174, 10.1103/PhysRevB.24.6174 Margaritondo, 1984, Solid-St. Commun., 52, 495, 10.1016/0038-1098(84)90862-7 Kelly, 1985, J. Vac. Sci. Technol., A3, 1481, 10.1116/1.572768 Backes, 1981, Solid-St. Commun., 40, 575, 10.1016/0038-1098(81)90577-9 Demuth, 1983, Phys. Rev. Lett., 51, 2214, 10.1103/PhysRevLett.51.2214 Stoffel, 1984, Phys. Rev., B30, 3294, 10.1103/PhysRevB.30.3294 Margaritondo, 1980, Appl. Phys. Lett., 37, 917, 10.1063/1.91858 Brillson, 1980, Phys. Rev. Lett., 44, 667, 10.1103/PhysRevLett.44.667 Brillson, 1982, Surface Sci. Rep., 2, 123, 10.1016/0167-5729(82)90001-2 Sang, 1984, Phys. Rev. Lett., 52, 1246, 10.1103/PhysRevLett.52.1246 D.W. Niles, G. Margaritondo, P. Perfetti, C. Quaresima and M. Capozi, Appl. Phys. Lett. (in press) Capasso, 1985, Appl. Phys. Lett., 46, 664, 10.1063/1.95521