Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst

Abhishek Singh Dahiya1, Charles Opoku1, Daniel Alquier1, Guylaine Poulin-Vittrant1, Frederic Cayrel1, Olivier Graton1, Louis-Pascal Tran Huu Hue1, Nicolas Camara1
1Université François Rabelais de Tours, CNRS, Tours, France

Tóm tắt

A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures. The growths of the various ZnO nanostructures have been carried out on SiC substrates in a horizontal furnace, using Au thin film as catalyst. From experimental observations, we have ascribed the growth mechanisms of the different ZnO nanostructures to be a combination of catalytic-assisted and non-catalytic-assisted vapor–liquid-solid (VLS) processes. We have also found that the different ZnO nanoarchitectures' material evolution is governed by a Zn cluster drift effects on the SiC surface mainly driven by growth temperature. Au thin film thickness, growth time, and temperature are the parameters to optimize in order to obtain the different ZnO nanoarchitectures.

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