Contribution of the gate insulator surface to work function measurements with a gas sensitive FET
SENSORS, 2002 IEEE - Tập 1 - Trang 439-442 vol.1
Tóm tắt
Describes the effect of the guard ring for suppression of the baseline drift induced by humidity and the contribution of the gate insulator surface to the measurement of work function shifts induced by the adsorption of gas species.
Từ khóa
#Gas insulation #FETs #Humidity #Hydrogen #Temperature sensors #Transducers #Surface resistance #Silicon #Electric potential #Intrusion detectionTài liệu tham khảo
10.1016/0925-4005(94)87044-6
10.1063/1.1134750
10.1016/0925-4005(90)80018-U
10.1109/T-ED.1987.23140
kiihnhold, 1999, Modelling the surface oxidation of silicon nitride ISFET devices, Proc 13th Eur Conf Solid-State Transducers
doll, 1998, Work function gas sensors-reference layers and signal analysis, Proc 12th Euro Conf Solid-State Transducers
10.1016/S0925-4005(01)00786-9