Comprehensive study of RF analysis of G/GO-based NEMS shunt switch
Tóm tắt
High isolation and low insertion loss are the key design parameters for the NEMS switch at high frequency. The comprehensive study of radio frequency (RF) performance analysis of graphene-graphene oxide (GO) based NEMS shunt switch is done in this work. The results show that GO along with graphene can be used as a suspended beam in RF NEMS switches. The RF performance analysis of GO-based NEMS switches has been evaluated for both monolayer and multilayer GO beam. It is also demonstrated that GO provides superior isolation and low insertion loss at RF. The monolayer GO has low pull-in voltage, acquires high downstate capacitance, and high switching speed. Nevertheless, multilayer GO also shows improved RF performance with high switching speed. The mode shape of the suspended beam is evaluated by performing the eigenfrequency analysis for the first three frequencies.
Tài liệu tham khảo
Ansari HR, Khosroabadi S (2019) Design and simulation of a novel RF MEMS shunt capacitive switch with a unique spring for Ka-band application. Microsyst Technol 25(2):531–540
Cao C, Daly M, Singh CV, Sun Y, Filleter T (2015) High strength measurement of monolayer graphene oxide. Carbon 81:497–504
Chaudhary R, Mudimela PR (2020) 3D modeling of graphene oxide based nanoelectromechanical capacitive switch. Microsyst Technol 26:2931–2937
Chu C, Liao X, Yan H (2017) Ka-band RF MEMS capacitive switch with low loss, high isolation, long-term reliability and high-power handling based on GaAs MMIC technology. IET Microw Antenna Propag 11:942–948
Feng XL, Matheny MH, Zorman CA, Mehregany M, Roukes ML (2010) Low voltage nanoelectromechanical switches based on silicon carbide nanowires. Nano Lett 10(8):2891–2896
Guha K, Kumar M, Parmar A, Baishya S (2016) Performance analysis of RF MEMS capacitive switch with non uniform meandering technique. Microsyst Technol 22(11):2633–2640
Hong SK, Kim KY, Kim TY, Kim JH, Park SW, Kim JH, Cho BJ (2012) Electromagnetic interference shielding effectiveness of monolayer graphene. Nanotechnology 23(45):455704
Jaafar H, Beh KS, Yunus NAM, Hasan WZW, Shafie S, Sidek O (2014) A comprehensive study on RF MEMS switch. Microsyst Technol 20(12):2109–2121
Jang WW, Lee JO, Yoon JB, Kim MS, Lee JM, Kim SM, Lee WS (2008) Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap. Appl Phys Lett 92(10):103110
Karbalaei M, Dideban D (2019) A scheme for silicon on insulator field effect transistor with improved performance using graphene. ECS J Solid State Sci Technol 8(9):M85
Karbalaei M, Dideban D, Heidari H (2019) Improvement in electrical characteristics of Silicon on Insulator (SOI) transistor using graphene material. Results Phys 15:102806
Kim SM, Song EB, Lee S, Seo S, Seo DH, Hwang Y, Wang KL (2011) Suspended few-layer graphene beam electromechanical switch with abrupt on-off characteristics and minimal leakage current. Appl Phys Lett 99(2):023103
Krishnamoorthy K, Veerapandian M, Yun K, Kim SJ (2013) The chemical and structural analysis of graphene oxide with different degrees of oxidation. Carbon 53:38–49
Li M, Zhao J, You Z, Zhao G (2017) Design and fabrication of a low insertion loss capacitive RF MEMS switch with novel micro-structures for actuation. Solid State Electron 127:32–37
Loh O, Wei X, Sullivan J, Ocola LE, Divan R, Espinosa HD (2012) Carbon-carbon contacts for robust nanoelectromechanical switches. Adv Mater 24(18):2463–2468
Ma LY, Nordin AN, Soin N (2016) Design, optimization and simulation of a low-voltage shunt capacitive RF-MEMS switch. Microsyst Technol 22(3):537–549
Milaninia KM, Baldo MA, Reina A, Kong J (2009) All graphene electromechanical switch fabricated by chemical vapor deposition. Appl Phys Lett 95(18):183105
Peroulis D, Pacheco SP, Sarabandi K, Katehi LP (2003) Electromechanical considerations in developing low-voltage RF MEMS switches. IEEE Trans Microw Theory Tech 51(1):259–270
Poulin P, Jalili R, Neri W, Nallet F, Divoux T, Colin A, Zakri C (2016) Superflexibility of graphene oxide. Proc Natl Acad Sci 113(40):11088–11093
Qian Y, Lou L, Juluis Tsai M, Lee C (2012) A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage. Appl Phys Lett 100(11):113102
Rebeiz GM (2003) RF MEMS theory, design and technology, 1st edn. Wiley, Hoboken, p 2003
Rebeiz GM, Muldavin JB (2001) RF MEMS switches and switch circuits. IEEE Microwave Mag 2(4):59–71
Rubrice K, Castel X, Himdi M, Parneix P (2016) Dielectric characteristics and microwave absorption of graphene composite materials. Materials 9(10):825
Sharma P, Perruisseau-Carrier J, Moldovan C, Ionescu AM (2013) Electromagnetic performance of RF NEMS graphene capacitive switches. IEEE Trans Nanotechnol 13(1):70–79
Singh T (2015) Design and finite element modeling of series-shunt configuration based RF MEMS switch for high isolation operation in K-Ka band. J Comput Electron 14(1):167–179
Sun J, Schmidt ME, Muruganathan M, Chong HM, Mizuta H (2016) Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates. Nanoscale 8(12):6659–6665
Waghmare SK, Shah DD (2018) RF MEMS capacitive shunt switch: a study based practical overview. Int J Appl Eng Res 13(15):11830–11838
Wan J, Jiang JW, Park HS (2017) Negative Poisson’s ratio in graphene oxide. Nanoscale 9(11):4007–4012
Yasser M, Abbas K, Khalil M (2013) Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys. J Microelectron Electron Compon Mater 43(2):85–96