Comparison studies on growth modes of MBE grown ZnSe on GaAs [111] A and GaAs [111] B, using RHEED
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 475-478
Tóm tắt
In the last three decades, research into wide bandgap II-VI semiconductors was mainly concentrated on the growth and characterisation of ZnSe based structures on GaAs [001] substrates. Therefore, very little is known about the growth processes on {111} GaAs surfaces. This paper presents the comparison of surface processes during MBE hetero-epitaxial growth of ZnSe epilayers on GaAs [111] A, and GaAs [111] B substrates using reflection high-energy diffraction (RHEED).
Từ khóa
#Gallium arsenide #Zinc compounds #Surface reconstruction #Atomic layer deposition #Temperature #Substrates #Diffraction #Chemicals #MONOS devices #EtchingTài liệu tham khảo
gard, 0, Surface and Interface Analysis
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