Comparison of the efficiency of 63Ni beta-radiation detectors made from silicon and wide-gap semiconductors

S. V. Zaitsev1, В. Н. Павлов1, V. Ya. Panchenko2, M.I. Polikarpov2, A. A. Svintsov1, E. B. Yakimov1
1Institute of Problems of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia
2National Research Center Kurchatov Institute, Moscow, Russia

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