Comparison of the MOS capacitor hydrogen sensors with different SiO2 film thicknesses and a Ni-gate film in a 4% hydrogen–nitrogen mixture

Earthquake Spectra - Tập 216 - Trang 367-373 - 2015
L. Fekri Aval1, S.M. Elahi1, E. Darabi1, S.A. Sebt1
1Plasma physics Research Center, Science and Research Branch, Islamic Azad University, PO Box 14665-679, Tehran, Iran