Coherent Growth of ZnSe on GaAs by MOCVD

Japanese Journal of Applied Physics - Tập 24 Số 8A - Trang L578 - 1985
Hiroshi Mitsuhashi1, Iwao Mitsuishi1, M. Mizuta1, Hiroshi Kukimoto1
1Imaging Science and Engineering Laboratory, Tokyo Institute of Technology

Tóm tắt

The lattice parameters of ZnSe have been studied for epitaxial layers of different thicknesses grown on GaAs (100) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylzinc and diethylselenide as source materials. The results indicate that layers thinner than 0.15 µm can grow coherently on GaAs involving strains due to the lattice mismatch between ZnSe and GaAs, while thicker layers contain misfit dislocations introduced by the relaxation of strain.

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Tài liệu tham khảo

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Japanese Journal of Applied Physics

Tập 24 Số 8A

L578

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