Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients
Tóm tắt
The field gradient along the MOSFET channel is included in the modeling of the gate-drain capacitance (C/sub gd/) by an induced capacitance approach. The new approach has been successfully implemented in surface-potential based model HiSIM (Hiroshima-university STARC IGFET Model) and is capable of reproducing measured effects, which are particularly significant for pocket-implant technology, accurately.
Từ khóa
#Circuits #MOSFETs #Capacitance #FETs #Particle measurements #Medical simulation #Analytical models #Radio frequency #Costs #ImplantsTài liệu tham khảo
0
10.1109/TCAD.1987.1270261
taur, 0, CMOS Devices Below 0.1?m: How High Will Performance Go?, IEDM Technical Digest, 215
hori, 0, A 0.1?m CMOS Technology with Tilt-Implanted Punchthrough Stopper (TIPS), IEDM Technical Digest, 75
0, MEDICI user s manual
navarro, 0, Circuit-Simulation Model of MOSFET Gate-Drain Capacitance, IEICE for publication
10.1109/JSSC.1987.1052752
el-mansy, 1977, a new approach to the theory and modeling of insulated-gate field-effect transistors, IEEE Transactions on Electron Devices, 24, 241, 10.1109/T-ED.1977.18715
10.1109/MWSYM.2002.1012289