Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Progress in Photovoltaics: Research and Applications - Tập 14 Số 6 - Trang 513-531 - 2006
Tonio Buonassisi1, A. A. Istratov2, Matthew D. Pickett1, M. Heuer1, J.P. Kalejs3, Giso Hahn4, Matthew A. Marcus5, Barry Lai6, Zhonghou Cai6, Steve M. Heald7, T. F. Ciszek8, Roger Clark9, Daniel W. Cunningham9, Andrew M. Gabor10, Ralf Jonczyk11, S. Narayanan9, E. Sauar12, E. R. Weber1
1Department of Materials Science and Engineering, University of California, Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
2Lawrence Berkeley National Laboratory, 1 Cyclotron Rd., Building 62‐109 (MS 62R0203), Berkeley, CA 94720, USA.
3RWE Schott Solar, 4 Suburban Park Drive, Billerica, MA 01821, USA; Presently at: JPK Consulting, 54 Northgate Road, Wellesley, MA 02481, USA
4University of Konstanz, Department of Physics, 78457 Konstanz, Germany
5#N#Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,USA
6Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 USA
7Pacific Northwest National Laboratory, Richland, WA 99352, USA
8Formerly: National Renewable Energy Laboratory, Golden, CO, USA/Presently: Siliconsultant, P.O. Box 1453, Evergreen, CO 80437, USA
9BP Solar, 630 Solarex Court, Frederick, MD 21703, USA
10Evergreen Solar, Inc., 259 Cedar Hill St., Marlboro, MA 01752, USA
11GE Energy, 231 Lake Drive, Newark, DE 19702, USA
12ScanWafer AS, PO Box 280, N‐1323 Høvik, Norway

Tóm tắt

AbstractWe present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solidified ingot‐grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal‐rich particles are assessed by synchrotron‐based analytical x‐ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal‐rich particles can be observed (metal silicide nanoprecipitates and metal‐rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc‐Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources. Copyright © 2006 John Wiley & Sons, Ltd.

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