Charge retention characteristics of SiGe quantum dot flash memories

For application to nonvolatile memory devices, a long retention time is most important. Recent efforts on alternate high-K gate dielectric materials replacing silicon dioxide in complementary metal-oxide-semiconductor (CMOS) technology have demonstrated a higher /spl epsiv/ values, reduced leakage, improved resistance to boron diffusion, and better reliability characteristics. In this paper we present the charge retention characteristics of SiGe nanocrystals embedded in ZrO/sub 2/ using a TaN/ZrO/sub 2//Si MIS. The devices show improved retention characteristics and have a high potential for further scaling of EEPROM cells.