Characterization of bonded wafer stacks by use of the photoelastic-analysis-method
Tóm tắt
The photo-elastic-analysis-method is a powerful method for investigating the overall quality of bonded wafer stacks. It can provide full wafer as well as high-resolution detailed images of stress distributions, which can be well correlated with the bonding quality. Poorly bonded areas, trapped particles, reliability risks due to stress gradients, influences of wafer handling and bonding tools, as well as effects from non-uniform temperature treatment, can be detected. Examples of process control and quality management will be presented for direct-bonded and anodic-bonded stacks. Limitations of the non-contact and non-destructive optical method will also be discussed.
Tài liệu tham khảo
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