Characterization of beryllium-implanted GaAsP/GaP strained-layer superlattice structure

Thin Solid Films - Tập 195 - Trang 111-116 - 1991
M.C. Shrivastava1
1Department of Electronics and Telecommunication Engineering, S.G.S. Institute of Technology and Science, 23 Park Road, Indore 452003 India

Tài liệu tham khảo

Mathew, 1974, J. Cryst. Growth, 27, 118 Whan, 1970, Appl. Phys. Lett., 17, 378, 10.1063/1.1653443 ErNisse, 1971, Appl. Phys. Lett., 18, 581, 10.1063/1.1653549 Myers, 1983, J. Appl. Phys., 54, 5032, 10.1063/1.332773 Sperious, 1981, J. Appl. Phys., 52, 6094, 10.1063/1.328549 Sperious, 1984, J. Appl. Phys., 56, 1591, 10.1063/1.334169 Halliwell, 1984, J. Cryst. Growth, 68, 523, 10.1016/0022-0248(84)90459-7 Wie, 1986, J. Appl. Phys., 59, 3743, 10.1063/1.336759 Paine, 1987, J. Appl. Phys., 61, 1335, 10.1063/1.338112 Hill, 1985, J. Appl. Cryst., 18, 446, 10.1107/S002188988501069X M.C. Shrivastava and S. Swaminathan, Microelectronics J. (U.K.), 19 (5) 29. Myers, 1986, J. Appl. Phys., 60, 3631, 10.1063/1.337570 Taupin, 1964, Bull. Soc. Fr. Mineral Crystallogr., 87, 469 Takagi, 1969, J. Phys. Soc. Jpn., 26, 1239, 10.1143/JPSJ.26.1239 1974, Vol. 4 Sperious, 1982, Appl. Phys. Lett., 40, 604, 10.1063/1.93195 MacNeal, 1981, J. Appl. Phys., 52, 3935, 10.1063/1.329198