Characterization and modeling of avalanche multiplication in HBTs
Tài liệu tham khảo
Erben, 1995, Class-A SiGe HBT power amplifiers at C-band frequencies, IEEE Microwave Guided Wave Lett., 5, 435, 10.1109/75.481852
Flitcroft, 1998, Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors, IEEE Trans. Electr. Dev., 45, 1207, 10.1109/16.678515
Niu, 1999, Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's, IEEE Trans. Electr. Dev., 46, 1007, 10.1109/16.760410
Hamel, 1997, Separating the influence of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT's, IEEE Trans. Electr. Dev., 44, 901, 10.1109/16.568056
Wang, 2000, Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors, IEEE Trans. Electr. Dev., 6, 1125, 10.1109/16.842953
Chen, 1989, Breakdown behavior of GaAs/AlGaAs HBT's, IEEE Trans. Electr. Dev., 36, 2165, 10.1109/16.40896
Niu, 1998, Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's, IEEE Trans. Electr. Dev., 8, 288, 10.1109/55.704402
C.C. McAndrew et al., VBIC 95: an improved vertical, IC bipolar transistor model, Proc. 1995 BCTM, pp. 170–177.
McAndrew, 1996, VBIC 95, the vertical bipolar inter-company model, IEEE J. Solid-State Circuit, 31, 476, 10.1109/4.540058
de Graff, 1985, New formulation of the current and charge relations in bipolar transistors for modeling for CACD purposes, IEEE Trans. Electr. Dev., 32, 2415, 10.1109/T-ED.1985.22288
W.J. Kloosterman, H.C. de Graaff, Avalanche multiplication in a computer bipolar transistor model for circuit simulation, Proc. 1988 BCTM, pp. 103–106.
Stubing, 1987, A compact physical large-signal model for high-speed bipolar transistors at high current densities-part I: one-dimensional model, IEEE Trans. Electr. Dev., 34, 1741, 10.1109/T-ED.1987.23146
Rein, 1987, A compact physical large-signal model for high-speed transistors at high current densities-part II: two-dimensional model and experimental results, IEEE Trans. Electr. Dev., 34, 1752, 10.1109/T-ED.1987.23147
Schroter, 1998, A compact tunneling current collector breakdown model, IEDM Tech. Dig., 203
F. Lin, T. Zhou, B. Chen, B.L. Ooi, P.S. Kooi, Extraction of VBIC model for SiGe HBTs made easy by going through Gummel-Poon model, in this Proceeding.
Kumer, 1994, Miller's approximation in advanced bipolar transistors under nonlocal impact ionization conditions, IEEE Trans. Electr. Dev., 41, 2471, 10.1109/16.337467
E.F. Crabbe et al., The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors, IEDM Tech. Dig., pp. 463–466.