Characterization and modeling of avalanche multiplication in HBTs

Microelectronics Journal - Tập 33 - Trang 39-43 - 2002
Fujiang Lin1, Bo Chen2, Tianshu Zhou2, Ban Leong Ooi2, Pang Shyan Kooi2
1Singapore Microelectronics Modeling Center (SMMC), Agilent Technologies, 438 Alexandra Road, Singapore 119958, Singapore
2Electrical Engineering Department, National University of Singapore (NUS), 10 Kent Ridge Crescent, Singapore 119260, Singapore

Tài liệu tham khảo

Erben, 1995, Class-A SiGe HBT power amplifiers at C-band frequencies, IEEE Microwave Guided Wave Lett., 5, 435, 10.1109/75.481852 Flitcroft, 1998, Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors, IEEE Trans. Electr. Dev., 45, 1207, 10.1109/16.678515 Niu, 1999, Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's, IEEE Trans. Electr. Dev., 46, 1007, 10.1109/16.760410 Hamel, 1997, Separating the influence of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT's, IEEE Trans. Electr. Dev., 44, 901, 10.1109/16.568056 Wang, 2000, Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors, IEEE Trans. Electr. Dev., 6, 1125, 10.1109/16.842953 Chen, 1989, Breakdown behavior of GaAs/AlGaAs HBT's, IEEE Trans. Electr. Dev., 36, 2165, 10.1109/16.40896 Niu, 1998, Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's, IEEE Trans. Electr. Dev., 8, 288, 10.1109/55.704402 C.C. McAndrew et al., VBIC 95: an improved vertical, IC bipolar transistor model, Proc. 1995 BCTM, pp. 170–177. McAndrew, 1996, VBIC 95, the vertical bipolar inter-company model, IEEE J. Solid-State Circuit, 31, 476, 10.1109/4.540058 de Graff, 1985, New formulation of the current and charge relations in bipolar transistors for modeling for CACD purposes, IEEE Trans. Electr. Dev., 32, 2415, 10.1109/T-ED.1985.22288 W.J. Kloosterman, H.C. de Graaff, Avalanche multiplication in a computer bipolar transistor model for circuit simulation, Proc. 1988 BCTM, pp. 103–106. Stubing, 1987, A compact physical large-signal model for high-speed bipolar transistors at high current densities-part I: one-dimensional model, IEEE Trans. Electr. Dev., 34, 1741, 10.1109/T-ED.1987.23146 Rein, 1987, A compact physical large-signal model for high-speed transistors at high current densities-part II: two-dimensional model and experimental results, IEEE Trans. Electr. Dev., 34, 1752, 10.1109/T-ED.1987.23147 Schroter, 1998, A compact tunneling current collector breakdown model, IEDM Tech. Dig., 203 F. Lin, T. Zhou, B. Chen, B.L. Ooi, P.S. Kooi, Extraction of VBIC model for SiGe HBTs made easy by going through Gummel-Poon model, in this Proceeding. Kumer, 1994, Miller's approximation in advanced bipolar transistors under nonlocal impact ionization conditions, IEEE Trans. Electr. Dev., 41, 2471, 10.1109/16.337467 E.F. Crabbe et al., The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors, IEDM Tech. Dig., pp. 463–466.