Characteristics of Al-doped ZnO films annealed at various temperatures for InGaZnO-based thin-film transistors

Thin Solid Films - Tập 587 - Trang 94-99 - 2015
Jaehyeong Lee1, Yong Seob Park2
1School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South Korea
2Department of Photoelectronics, Chosun College of Science and Technology, Gwangju 501-744, South Korea

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