Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator

Lasher, 1964, Solid State Electron., 7, 707, 10.1016/0038-1101(64)90027-9 Kawaguchi, 1993, IEE Proc. J. Optoelectron., 140, 3, 10.1049/ip-j.1993.0002 Harder, 1982, IEEE J. Quantum Electron., QE-18, 1351, 10.1109/JQE.1982.1071711 Kucharska, 1988, IEEE Proc. J. Optoelectron., 135, 31, 10.1049/ip-j.1988.0007 Paradisi, 1991, IEEE J. Quantum Electron., 27, 817, 10.1109/3.81394 Middlemast, 1991, IEE Proc. J. Optoelectron., 138, 301, 10.1049/ip-j.1991.0053 Yamada, 1992, Appl. Phys. Lett., 60, 2463, 10.1063/1.106934 O'Brien, 1991, Appl. Phys. Lett., 58, 1363, 10.1063/1.104309 Lammert, 1996, IEEE Photon. Technol. Lett., 8, 78, 10.1109/68.475784 Ueno, 1985, J. Appl. Phys., 58, 1689, 10.1063/1.336065 Kawaguchi, 1982, IEE Proc. J. Solid-state Electron. Devices, 129, 141, 10.1049/ip-i-1.1982.0031 Moran, 2001, J. Phys. D: Appl. Phys., 34, 1943, 10.1088/0022-3727/34/13/302 Fleischmann, 2001, J. Appl. Phys., 89, 4689, 10.1063/1.1359155 Hopkinson, 1999, J. Cryst. Growth, 201/202, 1085, 10.1016/S0022-0248(98)01531-0 Blood, 1989, Appl. Phys. Lett., 55, 1, 10.1063/1.101745 Khoo, 1999, IEE Proc. J. Optoelectron., 146, 62, 10.1049/ip-opt:19990454