Cd doping at the CuInSe2/CdS heterojunction

Journal of Applied Physics - Tập 93 Số 11 - Trang 9380-9382 - 2003
Dongxiang Liao1, Angus Rockett1
1Department of Materials Science and Engineering University of Illinois Urbana Illinois 61801

Tóm tắt

The chemical composition of the CuInSe2/CdS heterojunction interface is investigated by angle resolved x-ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy in combination with selective etching of CdS. We demonstrate that ∼0.8 monolayer of Cd is incorporated into the first 1–3 atomic layers of the CuInSe2. This is accompanied by significant Cu depletion with respect to In in the same region. The results suggest that CdCu defects heavily dope CuInSe2 surface n type and cause the observed large band bending on the CuInSe2 side of the heterojunction.

Từ khóa


Tài liệu tham khảo

1993, J. Appl. Phys., 73, 2902, 10.1063/1.353020

1994, J. Appl. Phys., 76, 1503, 10.1063/1.357725

2002, Appl. Phys. Lett., 81, 1008, 10.1063/1.1498499

2003, Appl. Phys. Lett., 82, 2829, 10.1063/1.1570516

1975, J. Appl. Phys., 46, 1777, 10.1063/1.321782

2000, Thin Solid Films, 361–362, 346

2002, J. Appl. Phys., 91, 1978, 10.1063/1.1434549

1989, Thin Solid Films, 171, 109, 10.1016/0040-6090(89)90038-2

1995, J. Electron Spectrosc. Relat. Phenom., 73, 25, 10.1016/0368-2048(94)02270-4

1997, Surf. Interface Anal., 25, 430, 10.1002/(SICI)1096-9918(199706)25:6<430::AID-SIA254>3.0.CO;2-7

1999, J. Appl. Phys., 86, 497, 10.1063/1.370758

1998, Phys. Rev. B, 57, 9642, 10.1103/PhysRevB.57.9642

Thông tin
Thông tin xuất bản

Journal of Applied Physics

Tập 93 Số 11

9380-9382

Thông tin tác giả