Cathodoluminescence study of nitride transistor structures characterisation of native oxide

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 133-136
E.M. Goldys1, T. Paskova2, J. Sheely3, W. Schaff3, L.F. Eastman3
1Division of Information and Communication Science, Macquarie University, Sydney, NSW, Australia
2Department of physics and measurement technology, Linkoping University, Linkoping, Sweden
3School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA

Tóm tắt

Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.

Từ khóa

#Gallium nitride #Voltage #Temperature #Acceleration #HEMTs #MODFETs #Surface treatment #Rough surfaces #Surface roughness #Artificial intelligence

Tài liệu tham khảo

0 10.1016/S0022-3697(98)00047-X 10.1016/S0040-6090(00)00984-6 10.1063/1.125156
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COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

133-136

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