Calculations of electron inelastic mean free paths for 31 materials

Surface and Interface Analysis - Tập 11 Số 11 - Trang 577-589 - 1988
Shigeo Tanuma1,2, C. J. Powell2, David R. Penn2
1Central Research Laboratories, Nippon Mining Company Ltd., 3-17-35 Niizo-Minami, Toda, Saitama 335, Japan.
2National Bureau of Standards Gaithersburg, MD 20899 USA

Tóm tắt

AbstractWe present new calculations of electron inelastic mean free paths (IMFPs) for 200–2000 eV electrons in 27 elements (C, Mg, Al, Si, Ti, V, Cr, Fe, Ni, Cu, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, Au and Bi) and four compounds (LiF, SiO2, ZnS and Al2O3). These calculations are based on an algorithm due to Penn which makes use of experimental optical data (to represent the dependence of the inelastic scattering probability on energy loss) and the theoretical Lindhard dielectric function (to represent the dependence of the scattering probability on momentum transfer). Our calculated IMFPs were fitted to the Bethe equation for inelastic electron scattering in matter; the two parameters in the Bethe equation were then empirically related to several material constants. The resulting general IMFP formula is believed to be useful for predicting the IMFP dependence on electron energy for a given material and the material‐dependence for a given energy. The new formula also appears to be a reasonable but more approximate guide to electron attenuation lengths.

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Surface and Interface Analysis

Tập 11 Số 11

577-589

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