Border traps: Issues for MOS radiation response and long-term reliability

Deal, 1980, IEEE Trans. Electron Dev., 27, 606, 10.1109/T-ED.1980.19908

Nicollian, 1982, MOS (Metal Oxide Semiconductor) Physics and Technology

Ma, 1989, Ionizing Radiation Effects in MOS Devices & Circuits

Fleetwood, 1992, IEEE Trans. Nucl. Sci., 39, 269, 10.1109/23.277495

Fleetwood, 1993, J. Appl. Phys., 73, 5058, 10.1063/1.353777

Sah, 1966, Phys. Rev. Lett., 17, 956, 10.1103/PhysRevLett.17.956

Nicollian, 1967, Bell System Tech. J., 46, 2019, 10.1002/j.1538-7305.1967.tb04241.x

Uren, 1989, Appl. Phys. Lett., 54, 1448, 10.1063/1.100693

Kerber, 1993, J. Appl. Phys., 74, 2125, 10.1063/1.354738

W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur, and R. A. B. Devine, Appl. Phys. Lett., accepted for publication.

Lai, 1981, J. Appl. Phys., 52, 6231, 10.1063/1.328565

Lai, 1983, J. Appl. Phys., 54, 2540, 10.1063/1.332323

Fischetti, 1985, J. Appl. Phys., 57, 2860, 10.1063/1.335223

Trombetta, 1988, J. Appl. Phys., 64, 2434, 10.1063/1.341678

Trombetta, 1991, J. Appl. Phys., 69, 2512, 10.1063/1.348689

Buchanan, 1990, J. Appl. Phys., 67, 7439, 10.1063/1.344534

Freitag, 1993, IEEE Trans. Nucl. Sci., 40, 1316, 10.1109/23.273536

Schwank, 1984, IEEE Trans. Nucl. Sci., 31, 1434, 10.1109/TNS.1984.4333525

Dozier, 1985, IEEE Trans. Nucl. Sci., 32, 4363, 10.1109/TNS.1985.4334125

Lelis, 1988, IEEE Trans. Nucl. Sci., 35, 1186, 10.1109/23.25437

Lelis, 1989, IEEE Trans. Nucl. Sci., 36, 1808, 10.1109/23.45373

Oldham, 1989, Semicon. Sci. & Technol., 4, 986, 10.1088/0268-1242/4/12/004

Stahlbush, 1990, IEEE Trans. Nucl. Sci., 37, 1641, 10.1109/23.101173

Fleetwood, 1992, Appl. Phys. Lett., 60, 2008, 10.1063/1.107126

Fleetwood, 1992, IEEE Trans. Nucl. Sci., 39, 2192, 10.1109/23.211421

Fleetwood, 1993, IEEE Trans. Nucl. Sci., 40, 1323, 10.1109/23.273535

Reimbold, 1984, IEEE Trans. Electron Dev., 31, 1190, 10.1109/T-ED.1984.21687

Kirton, 1989, Adv. Phys., 38, 367, 10.1080/00018738900101122

Simonne, 1989, Vol. 2, 639

Fleetwood, 1990, Phys. Rev. Lett., 64, 579, 10.1103/PhysRevLett.64.579

Scofield, 1991, IEEE Trans. Nucl. Sci., 38, 1567, 10.1109/23.124147

Henderson, 1984, Appl. Phys. Lett., 44, 228, 10.1063/1.94680

Jupina, 1989, IEEE Trans. Nucl. Sci., 36, 1800, 10.1109/23.45372

Jupina, 1990

Nicollian, 1971, J. Appl. Phys., 42, 5654, 10.1063/1.1659996

Nissan-Cohen, 1985, J. Appl. Phys., 58, 2252, 10.1063/1.335942

DiMaria, 1990, J. Appl. Phys., 68, 5234, 10.1063/1.347040

Fleetwood, 1994, Appl. Phys. Lett., 64, 1965, 10.1063/1.111757

Blakemore, 1974, Solid State Physics, 450

Farmer, 1991, 1

Schulz, 1991, 265

Mueller, 1994, J. Appl. Phys., 75, 2970, 10.1063/1.356194

Scofield, 1993, Noise in Physical Systems and 1f Fluctuations, 386

Manzini, 1983, 112

Oldman, 1986, IEEE Trans. Nucl. Sci., 33, 1203, 10.1109/TNS.1986.4334579

McLean, 1989, 155

McWhorter, 1990, IEEE Trans. Nucl. Sci., 37, 1682, 10.1109/23.101177

Scoggan, 1977, J. Appl. Phys., 48, 294, 10.1063/1.323376

Winokur, 1984, IEEE Trans. Nucl. Sci., 31, 1453, 10.1109/TNS.1984.4333529

McWhorter, 1986, Appl. Phys. Lett., 48, 133, 10.1063/1.96974

Meisenheimer, 1990, IEEE Trans. Nucl. Sci., 37, 1696, 10.1109/23.101179

Meisenheimer, 1991, IEEE Trans. Nucl. Sci., 38, 1297, 10.1109/23.124108

D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, IEEE Trans. Electron Dev., submitted for publication for November 1994 special issue.

Paulsen, 1992, IEEE Electron Dev. Lett., 13, 627, 10.1109/55.192866

Fleetwood, 1989, Appl. Phys. Lett., 55, 466, 10.1063/1.101854

Fleetwood, 1989, IEEE Trans. Nucl. Sci., 36, 1816, 10.1109/23.45374

Schwank, 1993, IEEE Trans. Nucl. Sci., 40, 1666, 10.1109/23.273494

Groeseneken, 1984, IEEE Trans. Electron Dev., 31, 42, 10.1109/T-ED.1984.21472

Lenahan, 1984, J. Appl. Phys., 55, 3495, 10.1063/1.332937

Kim, 1988, J. Appl. Phys., 64, 3551, 10.1063/1.341494

McWhorter, 1988, IEEE Trans. Nucl. Sci., 35, 1154, 10.1109/23.25433

Fleetwood, 1992, Appl. Phys. Lett., 60, 2883, 10.1063/1.106807

M. J. Uren, K. M. Brunson, and A. M. Hodge 60, 624 (1992).

Fleetwood, 1991, IEEE Trans. Nucl. Sci., 38, 1066, 10.1109/23.124076

Benedetto, 1985, IEEE Trans. Nucl. Sci., 32, 3916, 10.1109/TNS.1985.4334043

Freitag, 1987, IEEE Trans. Nucl. Sci., 34, 1172, 10.1109/TNS.1987.4337448

Saks, 1987, IEEE Trans. Nucl. Sci., 34, 1348, 10.1109/TNS.1987.4337478

Winokur, 1985, IEEE Trans. Nucl. Sci., 32, 3954, 10.1109/TNS.1985.4334049

Shaneyfelt, 1993, IEEE Trans. Nucl. Sci., 40, 1678, 10.1109/23.273493

Palkuti, 1989, IEEE Trans. Nucl. Sci., 36, 2140, 10.1109/23.45416

Huang, 1991, IEEE Trans. Nucl. Sci., 38, 1336, 10.1109/23.124114

Galloway, 1984, IEEE Trans. Nucl. Sci., 31, 1497, 10.1109/TNS.1984.4333537

Sexton, 1985, IEEE Trans. Nucl. Sci., 32, 3975, 10.1109/TNS.1985.4334053

Wilson, 1984, IEEE Trans. Nucl. Sci., 31, 1448, 10.1109/TNS.1984.4333528

Dimitrijev, 1987, Solid-State Electronics, 30, 991, 10.1016/0038-1101(87)90090-6

Dimitrijev, 1989, Solid-State Electronics, 32, 349, 10.1016/0038-1101(89)90122-6

Stojadinovic, 1989, Microelectron. Reliab., 29, 371, 10.1016/0026-2714(89)90623-9

McLean, 1989, IEEE Trans. Nucl. Sci., 36, 1772, 10.1109/23.45369

Zupac, 1992, Appl. Phys. Lett., 60, 3156, 10.1063/1.106727

Zupac, 1993, J. Appl. Phys., 73, 2910, 10.1063/1.353021

Zupac, 1993, IEEE Trans. Nucl. Sci., 40, 1307, 10.1109/23.273537

Saks, 1984, IEEE Trans. Nucl. Sci., 31, 1249, 10.1109/TNS.1984.4333491

Lipkin, 1990, J. Appl. Phys., 68, 4620, 10.1063/1.346172