Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

Applied Physics Letters - Tập 92 Số 3 - 2008
A. Suresh1, John F. Muth1
1North Carolina State University ECE Department, , Raleigh, North Carolina 27695, USA

Tóm tắt

The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage.

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Tài liệu tham khảo

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Applied Physics Letters

Tập 92 Số 3

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