1990, Rev. Mod. Phys., 62, 173, 10.1103/RevModPhys.62.173
1987, Semicond. Sci. Technol., 2, 460, 10.1088/0268-1242/2/7/012
1987, Semicond. Sci. Technol., 2, 701, 10.1088/0268-1242/2/10/514
1992, J. Phys.: Condens. Matter, 4, 6651
1955, Phys. Rev., 97, 869, 10.1103/PhysRev.97.869
1951, J. Chem. Phys., 19, 1396, 10.1063/1.1748067
1958, J. Phys. Chem. Solids, 6, 236
1976, Phys. Rev. B, 14, 556, 10.1103/PhysRevB.14.556
1967, Physica (Amsterdam), 34, 149, 10.1016/0031-8914(67)90062-6
1984, Phys. Rev. B, 30, 1979, 10.1103/PhysRevB.30.1979
1999, Phys. Status Solidi B, 216, 975, 10.1002/(SICI)1521-3951(199912)216:2<975::AID-PSSB975>3.0.CO;2-N
1989, Phys. Rev. B, 39, 12808, 10.1103/PhysRevB.39.12808
1988, Phys. Rev. B, 37, 2695
1984, Solid State Commun., 49, 943, 10.1016/0038-1098(84)90299-0
1990, Phys. Rev. B, 41, 1561, 10.1103/PhysRevB.41.1561
1996, Appl. Phys. Lett., 68, 1657, 10.1063/1.115896
1996, Phys. Rev. B, 54, 2491, 10.1103/PhysRevB.54.2491
1996, Phys. Rev. B, 53, 1997, 10.1103/PhysRevB.53.1997
1999, Appl. Phys. Lett., 74, 1117, 10.1063/1.123461
1976, J. Cryst. Growth, 32, 265, 10.1016/0022-0248(76)90041-5
1990, Phys. Rev. B, 41, 11992, 10.1103/PhysRevB.41.11992
1992, Phys. Rev. B, 46, 9913, 10.1103/PhysRevB.46.9913
1999, Phys. Rev. B, 60, 5404, 10.1103/PhysRevB.60.5404
1990, J. Appl. Phys., 86, 4520
1999, J. Appl. Phys., 85, 3222, 10.1063/1.369664
1991, IEEE J. Quantum Electron., 27, 708, 10.1109/3.81381
1988, Phys. Rev. B, 38, 6151
1989, J. Vac. Sci. Technol. A, 7, 415
1992, Phys. Rev. B, 45, 1204, 10.1103/PhysRevB.45.1204
1998, Phys. Rev. B, 57, 9081, 10.1103/PhysRevB.57.9081
1995, J. Nonlinear Opt. Phys. Mater., 4, 191, 10.1142/S0218863595000094
1989, Electron. Commun. Jpn., Part 2: Electron., 72, 29
1989, IEEE J. Quantum Electron., 25, 889, 10.1109/3.27977
1991, IEEE J. Quantum Electron., 27, 2035, 10.1109/3.83413
1992, IEEE J. Quantum Electron., 28, 1670, 10.1109/3.142554
1994, J. Comput. Phys., 115, 288, 10.1006/jcph.1994.1196
1988, Phys. Rev. B, 38, 9819, 10.1103/PhysRevB.38.9819
1985, Solid State Commun., 53, 777, 10.1016/0038-1098(85)90218-2
1989, Riv. Nuovo Cimento, 12, 1
1987, Appl. Phys. Lett., 51, 1019, 10.1063/1.98817
1990, Superlattices Microstruct., 7, 35, 10.1016/0749-6036(90)90111-J
1993, J. Appl. Phys., 74, 5053, 10.1063/1.354288
1993, Phys. Rev. B, 47, 13498, 10.1103/PhysRevB.47.13498
1993, J. Appl. Phys., 74, 4777, 10.1063/1.354349
1993, Phys. Rev. B, 48, 11469, 10.1103/PhysRevB.48.11469
1954, Phys. Rev., 94, 1498, 10.1103/PhysRev.94.1498
1975, Phys. Status Solidi B, 68, 405, 10.1002/pssb.2220680140
1983, J. Phys. Chem. Solids, 44, 365, 10.1016/0022-3697(83)90064-1
2000, Superlattices Microstruct., 27, 520
1985, Phys. Rev. B, 31, 2056, 10.1103/PhysRevB.31.2056
1986, Phys. Rev. B, 33, 2594, 10.1103/PhysRevB.33.2594
1988, Phys. Rev. B, 37, 8215, 10.1103/PhysRevB.37.8215
1994, Phys. Rev. B, 50, 5429, 10.1103/PhysRevB.50.5429
1959, Phys. Rev., 116, 287, 10.1103/PhysRev.116.287
1961, Phys. Rev., 122, 1821, 10.1103/PhysRev.122.1821
1996, Phys. Rev. B, 53, 7949, 10.1103/PhysRevB.53.7949
1999, Phys. Rev. B, 60, 5590, 10.1103/PhysRevB.60.5590
1983, J. Appl. Phys., 53, R123
1975, J. Electrochem. Soc., 122, 1133, 10.1149/1.2134410
1987, Phys. Rev. B, 35, 9174, 10.1103/PhysRevB.35.9174
1988, Appl. Phys. Lett., 53, 1080, 10.1063/1.100027
1992, Phys. Rev. B, 45, 1638, 10.1103/PhysRevB.45.1638
1993, Phys. Rev. B, 48, 4398, 10.1103/PhysRevB.48.4398
1976, Phys. Rev. B, 14, 5331, 10.1103/PhysRevB.14.5331
1973, Phys. Rev. B, 7, 4605, 10.1103/PhysRevB.7.4605
1970, J. Phys. C, 3, L94, 10.1088/0022-3719/3/5/005
1984, J. Phys. C, 17, 4429, 10.1088/0022-3719/17/25/007
1985, J. Phys. Soc. Jpn., 54, 3488, 10.1143/JPSJ.54.3488
1986, J. Phys. Soc. Jpn., 55, 1282, 10.1143/JPSJ.55.1282
1996, Phys. Rev. B, 53, 12813, 10.1103/PhysRevB.53.12813
1983, Phys. Status Solidi B, 120, 715, 10.1002/pssb.2221200231
1991, Semicond. Sci. Technol., 6, 27, 10.1088/0268-1242/6/1/005
1999, Infrared Phys. Technol., 40, 343, 10.1016/S1350-4495(99)00020-1
1992, Semicond. Sci. Technol., 7, 357, 10.1088/0268-1242/7/3/014
1995, Physica B, 210, 1, 10.1016/0921-4526(94)00921-H
1990, J. Appl. Phys., 68, 2367, 10.1063/1.346520
1971, Phys. Rev. B, 4, 3460, 10.1103/PhysRevB.4.3460
1976, J. Phys. C, 9, 2809, 10.1088/0022-3719/9/14/019
1977, Festkoerperprobleme, XVII, 195
1979, Phys. Rev. B, 20, 3303, 10.1103/PhysRevB.20.3303
1988, Phys. Rev. B, 37, 922, 10.1103/PhysRevB.37.922
1988, Phys. Rev. B, 38, 4314, 10.1103/PhysRevB.38.4314
1989, Phys. Rev. B, 39, 3411, 10.1103/PhysRevB.39.3411
1990, Phys. Status Solidi B, 157, 311, 10.1002/pssb.2221570132
1991, Phys. Rev. B, 43, 14734, 10.1103/PhysRevB.43.14734
1976, Phys. Rev. B, 13, 4466, 10.1103/PhysRevB.13.4466
1977, Phys. Rev. B, 15, 823, 10.1103/PhysRevB.15.823
1986, Physica B, 139–140, 401
1991, Semicond. Sci. Technol., 6, 963, 10.1088/0268-1242/6/10/002
1990, IEEE J. Quantum Electron., 26, 213, 10.1109/3.44950
1998, Phys. Rev. B, 58, R1710, 10.1103/PhysRevB.58.R1710
1984, Solid State Commun., 51, 179, 10.1016/0038-1098(84)90545-3
1984, Phys. Status Solidi B, 126, 11, 10.1002/pssb.2221260102
1984, Phys. Rev. B, 30, 5753, 10.1103/PhysRevB.30.5753
1984, Phys. Rev. B, 30, 4571, 10.1103/PhysRevB.30.4571
1992, Phys. Rev. B, 46, 4328, 10.1103/PhysRevB.46.4328
1986, J. Appl. Phys., 59, 3577, 10.1063/1.336782
1987, Phys. Rev. Lett., 59, 501, 10.1103/PhysRevLett.59.501
1989, Phys. Rev. B, 39, 1871, 10.1103/PhysRevB.39.1871
1986, Semicond. Sci. Technol., 1, 128, 10.1088/0268-1242/1/2/006
1998, Phys. Status Solidi B, 210, 353, 10.1002/(SICI)1521-3951(199812)210:2<353::AID-PSSB353>3.0.CO;2-X
1973, Phys. Rev. B, 8, 5711, 10.1103/PhysRevB.8.5711
1994, J. Appl. Phys., 75, 4779, 10.1063/1.355769
1987, Solid State Commun., 61, 157, 10.1016/0038-1098(87)90021-4
1972, Phys. Rev. B, 5, 2978, 10.1103/PhysRevB.5.2978
1991, Phys. Rev. B, 43, 11950, 10.1103/PhysRevB.43.11950
1992, Phys. Rev. B, 45, 10951, 10.1103/PhysRevB.45.10951
1980, Phys. Rev. B, 21, 659, 10.1103/PhysRevB.21.659
1981, Phys. Status Solidi B, 105, 777, 10.1002/pssb.2221050240
1985, J. Appl. Phys., 58, 495, 10.1063/1.335652
1987, J. Vac. Sci. Technol., 5, 1464, 10.1116/1.574622
1990, J. Appl. Phys., 68, 4310, 10.1063/1.346226
1992, Superlattices Microstruct., 11, 55, 10.1016/0749-6036(92)90361-8
1988, Sov. Phys. Semicond., 22, 163
1988, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 22, 269
1986, Phys. Rev. B, 33, 8564, 10.1103/PhysRevB.33.8564
1973, Phys. Status Solidi B, 55, 187, 10.1002/pssb.2220550118
1972, Phys. Status Solidi B, 49, K167, 10.1002/pssb.2220490115
1991, Solid State Commun., 79, 1039, 10.1016/0038-1098(91)90006-H
1995, J. Phys. Chem. Solids, 56, 429, 10.1016/0022-3697(94)00217-7
1992, Physica B, 177, 465, 10.1016/0921-4526(92)90151-H
1989, J. Appl. Phys., 66, 2108, 10.1063/1.344304
1996, IEEE Electron Device Lett., 17, 69, 10.1109/55.484126
1998, IEE Proc.: Optoelectron., 145, 275
1958, Phys. Rev., 111, 472, 10.1103/PhysRev.111.472
1967, Phys. Rev., 154, 737, 10.1103/PhysRev.154.737
1976, Phys. Status Solidi A, 37, K173, 10.1002/pssa.2210370260
1983, Sov. Phys. Semicond., 17, 449
1983, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 17, 718
1964, Can. J. Phys., 42, 1879, 10.1139/p64-176
1968, Can. J. Phys., 46, 1207, 10.1139/p68-154
1996, J. Appl. Phys., 80, 6416, 10.1063/1.363660
1968, J. Phys. Soc. Jpn., 24, 1178, 10.1143/JPSJ.24.1178
1990, J. Appl. Phys., 67, 7034, 10.1063/1.345050
1994, Jpn. J. Appl. Phys., Part 1, 33, 1740, 10.1143/JJAP.33.1740
1987, J. Appl. Phys., 61, 4869, 10.1063/1.338352
1980, JETP Lett., 31, 154
1980, Pis'ma Zh. Eksp. Teor. Fiz., 31, 169
1966, Phys. Status Solidi, 16, K55
1967, Phys. Status Solidi, 24, K87
1971, Can. J. Phys., 49, 2052, 10.1139/p71-248
1971, Sov. Phys. Semicond., 4, 1184
1970, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 4, 1390
1973, Sov. Phys. Semicond., 6, 1568
1973, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 6, 1816
1975, Phys. Rev. B, 12, 5739, 10.1103/PhysRevB.12.5739
1978, Phys. Rev. B, 18, 4394, 10.1103/PhysRevB.18.4394
1981, Jpn. J. Appl. Phys., Part 1, 20, 1265, 10.1143/JJAP.20.1265
1992, Semicond. Sci. Technol., 7, 767, 10.1088/0268-1242/7/6/008
1998, Physica B, 256–258, 625
1998, Phys. Status Solidi B, 210, 845, 10.1002/(SICI)1521-3951(199812)210:2<845::AID-PSSB845>3.0.CO;2-9
1979, J. Appl. Phys., 50, 4872, 10.1063/1.326552
1972, Sov. Phys. Semicond., 5, 1495
1971, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 5, 1710
1985, J. Phys. Chem. Solids, 46, 977, 10.1016/0022-3697(85)90101-5
1967, Solid State Commun., 5, 677, 10.1016/0038-1098(67)90091-9
1968, Phys. Rev., 171, 876, 10.1103/PhysRev.171.876
1978, Phys. Rev. B, 18, 5590, 10.1103/PhysRevB.18.5590
1975, Phys. Rev. B, 12, 1371, 10.1103/PhysRevB.12.1371
1983, J. Phys. Soc. Jpn., 52, 1057, 10.1143/JPSJ.52.1057
1993, Phys. Rev. B, 47, 15588, 10.1103/PhysRevB.47.15588
1996, J. Phys.: Condens. Matter, 8, 4369
1975, Sov. Phys. Semicond., 9, 54
1975, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 9, 85
1983, J. Phys. Soc. Jpn., 52, 2838, 10.1143/JPSJ.52.2838
1979, Phys. Rev. B, 19, 2231, 10.1103/PhysRevB.19.2231
1977, J. Phys. C, 10, 5111, 10.1088/0022-3719/10/24/029
1972, Solid State Commun., 11, 779, 10.1016/0038-1098(72)90269-4
1973, Solid State Commun., 12, 413, 10.1016/0038-1098(73)90785-0
1974, Solid State Commun., 15, 693, 10.1016/0038-1098(74)90242-7
1976, Phys. Rev. Lett., 37, 1292, 10.1103/PhysRevLett.37.1292
1979, Phys. Rev. B, 19, 2209, 10.1103/PhysRevB.19.2209
1978, J. Electron. Mater., 7, 1, 10.1007/BF02656016
1974, Sov. Phys. Semicond., 7, 1449
1973, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 7, 2175
1987, Appl. Phys. Lett., 50, 615, 10.1063/1.98098
1995, Appl. Phys. Lett., 67, 1048, 10.1063/1.114460
1999, Phys. Status Solidi B, 211, 869, 10.1002/(SICI)1521-3951(199902)211:2<869::AID-PSSB869>3.0.CO;2-N
1975, Phys. Rev. B, 12, 5803, 10.1103/PhysRevB.12.5803
1987, Phys. Rev. B, 36, 4813, 10.1103/PhysRevB.36.4813
1990, Solid State Commun., 73, 15, 10.1016/0038-1098(90)90005-V
1991, Phys. Rev. B, 44, 9052, 10.1103/PhysRevB.44.9052
1987, Phys. Rev. B, 36, 4813, 10.1103/PhysRevB.36.4813
1990, Solid State Commun., 73, 15, 10.1016/0038-1098(90)90005-V
1973, J. Phys. C, 6, 1586, 10.1088/0022-3719/6/9/016
1980, Phys. Rev. B, 22, 2020, 10.1103/PhysRevB.22.2020
1983, Jpn. J. Appl. Phys., Part 2, 22, L742, 10.1143/JJAP.22.L742
1983, Infrared Phys., 23, 311, 10.1016/0020-0891(83)90004-0
1983, Jpn. J. Appl. Phys., Suppl., 23, 69
1984, J. Phys. Soc. Jpn., 53, 3553, 10.1143/JPSJ.53.3553
1985, J. Phys. Soc. Jpn., 54, 725, 10.1143/JPSJ.54.725
1985, Solid State Commun., 53, 547, 10.1016/0038-1098(85)90189-9
1987, Semicond. Sci. Technol., 2, 568, 10.1088/0268-1242/2/9/002
1994, Z. Phys. B: Condens. Matter, 95, 281, 10.1007/BF01343953
1996, Z. Phys. B: Condens. Matter, 100, 33, 10.1007/s002570050090
1996, J. Appl. Phys., 80, 4491, 10.1063/1.363410
1977, Physica B, 89, 139, 10.1016/0378-4363(77)90068-7
1978, Sov. Phys. Semicond., 12, 1243
1978, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 12, 2081
1988, Sov. Phys. Semicond., 22, 355
1988, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 22, 569
1988, Phys. Lett. A, 127, 373, 10.1016/0375-9601(88)90589-0
1979, Phys. Status Solidi B, 92, 425, 10.1002/pssb.2220920210
1997, Appl. Phys. Rev., 81, 5821, 10.1063/1.365356
1992, J. Appl. Phys., 72, 4275, 10.1063/1.352216
1995, Phys. Rev. B, 52, 1463, 10.1103/PhysRevB.52.1463
1997, Solid State Commun., 104, 81, 10.1016/S0038-1098(97)00277-9
1981, Phys. Rev. B, 23, 928, 10.1103/PhysRevB.23.928
1983, Phys. Rev. B, 27, 4946, 10.1103/PhysRevB.27.4946
1984, Solid State Commun., 49, 1071, 10.1016/0038-1098(84)90426-5
1981, Can. J. Phys., 59, 1844, 10.1139/p81-245
1972, Phys. Rev. B, 5, 3033, 10.1103/PhysRevB.5.3033
1973, Phys. Rev. B, 8, 3852, 10.1103/PhysRevB.8.3852
1974, J. Phys. Chem. Solids, 35, 1533, 10.1016/S0022-3697(74)80282-9
1977, Sov. Phys. Semicond., 10, 1234
1976, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 10, 2072
1978, Can. J. Phys., 56, 1468, 10.1139/p78-196
1998, Phys. Rev. B, 58, 4560
1966, Phys. Lett., 20, 217, 10.1016/0031-9163(66)90330-1
1970, Phys. Rev. B, 1, 3450, 10.1103/PhysRevB.1.3450
1988, Phys. Rev. B, 38, 1806, 10.1103/PhysRevB.38.1806
1989, J. Appl. Phys., 66, 383, 10.1063/1.343888
1973, Sov. Phys. Semicond., 7, 140
1973, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 7, 196
1975, Phys. Rev. B, 12, 5846, 10.1103/PhysRevB.12.5846
1979, Solid State Commun., 30, 631, 10.1016/0038-1098(79)90111-X
1986, Phys. Rev. B, 34, 8650, 10.1103/PhysRevB.34.8650
1998, Phys. Rev. B, 57, 2295, 10.1103/PhysRevB.57.2295
1990, Thin Solid Films, 190, 21, 10.1016/0040-6090(90)90127-Y
1970, Phys. Rev. B, 1, 1436, 10.1103/PhysRevB.1.1436
1957, J. Phys. Chem. Solids, 1, 249, 10.1016/0022-3697(57)90013-6
1998, Opto-Electron. Rev., 6, 155
1980, Can. J. Phys., 58, 560, 10.1139/p80-079
1974, J. Phys. Chem. Solids, 35, 133, 10.1016/0022-3697(74)90026-2
1988, Appl. Phys. Lett., 52, 489, 10.1063/1.99421
1987, Sov. Phys. Semicond., 21, 424
1987, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 21, 694
1985, Appl. Phys. Lett., 46, 986, 10.1063/1.95789
1991, J. Appl. Phys., 69, 3109, 10.1063/1.348576
1961, J. Appl. Phys., 32, 2118, 10.1063/1.1777027
1966, Phys. Rev., 146, 575, 10.1103/PhysRev.146.575
1974, Sov. Phys. Semicond., 7, 1451
1973, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 7, 2179
1978, Phys. Rev. B, 18, 5667, 10.1103/PhysRevB.18.5667
1979, J. Magn. Magn. Mater., 11, 131, 10.1016/0304-8853(79)90248-8
1986, Sov. Phys. Semicond., 20, 603
1986, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 20, 954
1983, Chin. J. Semicond., 4, 549
1983, Chin. J. Semicond., 4, 230
1991, Phys. Status Solidi B, 167, 349, 10.1002/pssb.2221670136
1993, Semicond. Sci. Technol., 8, S417, 10.1088/0268-1242/8/1S/092
1993, Phys. Rev. B, 47, 16274, 10.1103/PhysRevB.47.16274
1993, Phys. Rev. B, 47, 16274, 10.1103/PhysRevB.47.16274
1979, Sov. Phys. Semicond., 13, 178
1979, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 13, 311
1969, Phys. Rev., 186, 824, 10.1103/PhysRev.186.824
1981, J. Phys. Colloq., 42, C7
1983, Phys. Status Solidi B, 116, 557, 10.1002/pssb.2221160217
1987, Sov. Phys. Semicond., 21, 859
1987, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 21, 1413
1990, Sov. Phys. Semicond., 24, 660
1990, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 24, 1047
1980, J. Phys. Soc. Jpn., 49, 1060, 10.1143/JPSJ.49.1060
1973, Phys. Status Solidi B, 55, K139
1986, Phys. Status Solidi B, 135, K129
1977, Phys. Rev. B, 16, 2822, 10.1103/PhysRevB.16.2822
1979, Sov. Phys. Semicond., 13, 773
1979, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 13, 1319
1972, Phys. Rev. Lett., 29, 647, 10.1103/PhysRevLett.29.647
1991, Phys. Rev. B, 44, 9056, 10.1103/PhysRevB.44.9056
1974, Sov. Phys. Semicond., 8, 147
1974, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 8, 225
2000, J. Appl. Phys., 87, 965, 10.1063/1.371971
1971, Phys. Rev. B, 4, 1211, 10.1103/PhysRevB.4.1211
1972, J. Appl. Phys., 43, 3797, 10.1063/1.1661813
1997, MRS Internet J. Nitride Semicond. Res., 2, 10, 10.1557/S1092578300001368
1974, J. Appl. Phys., 45, 2266, 10.1063/1.1663574
1974, Phys. Rev. B, 10, 676, 10.1103/PhysRevB.10.676
1995, Appl. Phys. Lett., 66, 985, 10.1063/1.113820
1995, Appl. Phys. Lett., 67, 2512, 10.1063/1.114442
1995, Phys. Rev. B, 52, R17028, 10.1103/PhysRevB.52.R17028
1996, Appl. Phys. Lett., 68, 2784, 10.1063/1.116606
1996, Semicond. Sci. Technol., 11, 712, 10.1088/0268-1242/11/5/010
1996, Phys. Rev. B, 53, 16425, 10.1103/PhysRevB.53.16425
1997, Appl. Phys. Lett., 70, 631, 10.1063/1.118293
1997, J. Appl. Phys., 81, 417, 10.1063/1.364074
1997, Phys. Rev. B, 55, 9251, 10.1103/PhysRevB.55.9251
1998, J. Cryst. Growth, 189/190, 652, 10.1016/S0022-0248(98)00236-X
1996, MRS Internet J. Nitride Semicond. Res., 1, 2, 10.1557/S1092578300001745
1996, J. Appl. Phys., 79, 7001, 10.1063/1.362448
1996, J. Appl. Phys., 80, 594, 10.1063/1.362724
1997, Appl. Phys. Lett., 71, 2572, 10.1063/1.120191
1996, J. Appl. Phys., 79, 2784, 10.1063/1.361110
1994, J. Appl. Phys., 76, 2429, 10.1063/1.357592
1995, Phys. Rev. B, 52, 8082, 10.1103/PhysRevB.52.8082
1995, Appl. Phys. Lett., 67, 3322, 10.1063/1.115234
1999, Sov. Phys. Semicond., 33, 1067
1999, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 33, 1173
1997, J. Appl. Phys., 82, 5090, 10.1063/1.366309
1994, Phys. Rev. B, 50, 4397
1994, Phys. Rev. B, 50, 18017, 10.1103/PhysRevB.50.18017
1995, Jpn. J. Appl. Phys., Part 1, 34, 5912, 10.1143/JJAP.34.5912
1996, Phys. Rev. B, 54, 17577, 10.1103/PhysRevB.54.17577
1998, J. Appl. Phys., 83, 1429, 10.1063/1.366847
1997, Phys. Rev. B, 55, 4360
1996, Phys. Rev. B, 54, 2491, 10.1103/PhysRevB.54.2491
1996, Appl. Phys. Lett., 69, 2719, 10.1063/1.117689
1995, Phys. Rev. B, 52, 8132, 10.1103/PhysRevB.52.8132
1973, Phys. Rev. B, 7, 743, 10.1103/PhysRevB.7.743
1974, Phys. Status Solidi B, 64, K123, 10.1002/pssb.2220640116
1976, Sov. Phys. Semicond., 10, 1309
1976, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 10, 2200
1995, Solid State Commun., 95, 597, 10.1016/0038-1098(95)00337-1
1999, Appl. Phys. Lett., 75, 4154, 10.1063/1.125567
1995, Jpn. J. Appl. Phys., Part 2, 34, L1178, 10.1143/JJAP.34.L1178
1996, Appl. Phys. Lett., 68, 1114, 10.1063/1.115730
1996, J. Appl. Phys., 79, 8007, 10.1063/1.362351
1997, Appl. Phys. Lett., 70, 2123, 10.1063/1.118967
2000, Phys. Rev. B, 62, 7365
1998, Phys. Rev. B, 57, 1374, 10.1103/PhysRevB.57.1374
2000, J. Appl. Phys., 87, 369, 10.1063/1.371869
1998, Appl. Phys. Lett., 73, 1391, 10.1063/1.121954
2000, Appl. Phys. Lett., 76, 2737, 10.1063/1.126460
1995, Jpn. J. Appl. Phys., Part 2, 34, L822, 10.1143/JJAP.34.822
1970, Phys. Rev. Lett., 24, 1421, 10.1103/PhysRevLett.24.1421
1972, J. Lumin., 5, 21, 10.1016/0022-2313(72)90032-4
1995, Semicond. Sci. Technol., 10, 101, 10.1088/0268-1242/10/1/017
1997, Appl. Phys. Lett., 71, 948, 10.1063/1.119697
2000, Phys. Rev. B, 61, 12933, 10.1103/PhysRevB.61.12933
1996, Phys. Rev. B, 53, 16310, 10.1103/PhysRevB.53.16310
1996, Phys. Rev. B, 54, 13460, 10.1103/PhysRevB.54.13460
1997, J. Appl. Phys., 82, 1518, 10.1063/1.365951
1997, J. Appl. Phys., 82, 2833, 10.1063/1.366114
1979, Izv. Akad. Nauk SSSR, Neorg. Mater., 15, 1598
1979, Inorg. Mater., 15, 1257
1996, J. Appl. Phys., 79, 3343, 10.1063/1.361236
1996, Physica B, 219–220, 547
1997, Appl. Phys. Lett., 70, 1122, 10.1063/1.118503
1998, Appl. Phys. Lett., 72, 1896, 10.1063/1.121219
1999, Appl. Phys. Lett., 75, 4133, 10.1063/1.125560
1999, J. Non-Cryst. Solids, 254, 123, 10.1016/S0022-3093(99)00383-X
1996, Appl. Phys. Lett., 68, 818, 10.1063/1.116543
1997, Phys. Rev. B, 56, R10024, 10.1103/PhysRevB.56.R10024
1998, J. Appl. Phys., 84, 4951, 10.1063/1.368739
2000, Phys. Rev. B, 62, 8003, 10.1103/PhysRevB.62.8003
1974, Phys. Status Solidi B, 66, 161, 10.1002/pssb.2220660117
1991, J. Vac. Sci. Technol. B, 9, 1924
1992, J. Mater. Sci. Lett., 11, 261, 10.1007/BF00729406
1993, J. Appl. Phys., 73, 189, 10.1063/1.353882
1994, Appl. Phys. Lett., 64, 2997, 10.1063/1.111383
1994, Phys. Rev. B, 50, 8433, 10.1103/PhysRevB.50.8433
1996, J. Appl. Phys., 79, 188, 10.1063/1.360930
1999, J. Phys. Chem. Solids, 60, 419, 10.1016/S0022-3697(98)00005-5
1999, Semicond. Sci. Technol., 14, 23, 10.1088/0268-1242/14/1/003
1996, Phys. Rev. B, 53, 1881, 10.1103/PhysRevB.53.1881
1997, Appl. Phys. Lett., 71, 2067, 10.1063/1.119344
2000, Appl. Phys. Lett., 76, 3025, 10.1063/1.126567
1993, Phys. Rev. B, 48, 15144, 10.1103/PhysRevB.48.15144
1996, Appl. Phys. Lett., 68, 296, 10.1063/1.116064
1996, J. Appl. Phys., 79, 7731, 10.1063/1.362377
1996, Appl. Phys. Lett., 69, 3378, 10.1063/1.117265
1996, Semicond. Sci. Technol., 11, 897, 10.1088/0268-1242/11/6/008
1998, IEEE J. Sel. Top. Quantum Electron., 4, 527, 10.1109/2944.704113
1997, Appl. Phys. Lett., 70, 2577, 10.1063/1.118924
1997, Phys. Rev. B, 56, 7018
1973, J. Appl. Phys., 44, 292, 10.1063/1.1661876
1978, Appl. Phys. Lett., 33, 319, 10.1063/1.90354
1994, Jpn. J. Appl. Phys., Part 1, 33, 2454
1995, Appl. Phys. Lett., 67, 1549, 10.1063/1.114489
1998, Appl. Phys. Lett., 72, 1501, 10.1063/1.121039
1997, Phys. Rev. B, 56, 7363, 10.1103/PhysRevB.56.7363
1998, Appl. Phys. Lett., 72, 2274, 10.1063/1.121277
1993, J. Am. Ceram. Soc., 76, 1132, 10.1111/j.1151-2916.1993.tb03730.x
1996, Jpn. J. Appl. Phys., Part 1, 35, 4421, 10.1143/JJAP.35.4421
1999, Phys. Rev. B, 60, 1496, 10.1103/PhysRevB.60.1496
1999, J. Appl. Phys., 86, 3714, 10.1063/1.371241
1999, Appl. Phys. Lett., 75, 2407, 10.1063/1.125029
2000, Appl. Phys. Lett., 76, 1428, 10.1063/1.126053
2000, Appl. Phys. Lett., 76, 1981, 10.1063/1.126229
2000, Phys. Rev. B, 61, 2711, 10.1103/PhysRevB.61.2711
1997, Phys. Rev. B, 56, 7404, 10.1103/PhysRevB.56.7404
1975, J. Appl. Phys., 46, 3432, 10.1063/1.322064
1976, Thin Solid Films, 36, 141, 10.1016/0040-6090(76)90423-5
1977, Sov. Phys. Semicond., 11, 1257
1977, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 11, 2142
1986, J. Appl. Phys., 59, 3241, 10.1063/1.336906
1990, Thin Solid Films, 192, 227, 10.1016/0040-6090(90)90068-O
1990, Vacuum, 41, 1071, 10.1016/0042-207X(90)93870-O
1992, J. Vac. Sci. Technol. B, 10, 1237, 10.1116/1.585897
1970, Phys. Rev. B, 1, 3351, 10.1103/PhysRevB.1.3351
1988, Phys. Rev. B, 38, 3263, 10.1103/PhysRevB.38.3263
1987, Appl. Phys. Lett., 51, 505, 10.1063/1.98380
1987, Semicond. Sci. Technol., 2, 468, 10.1088/0268-1242/2/7/015
1988, J. Appl. Phys., 63, 5447, 10.1063/1.340366
1985, J. Appl. Phys., 57, 512, 10.1063/1.334784
1986, J. Appl. Phys., 60, 754, 10.1063/1.337426
1991, Phys. Rev. B, 44, 8672, 10.1103/PhysRevB.44.8672
1995, Phys. Rev. B, 51, 10462, 10.1103/PhysRevB.51.10462
1981, J. Appl. Phys., 52, 3586, 10.1063/1.329090
1986, J. Phys. C, 19, L335, 10.1088/0022-3719/19/15/005
1985, J. Appl. Phys., 58, 3481, 10.1063/1.335771
1990, Solid State Commun., 76, 1087, 10.1016/0038-1098(90)90970-M
1998, Appl. Phys. Lett., 73, 665, 10.1063/1.121941
1992, IEEE J. Quantum Electron., 28, 1248, 10.1109/3.135265
1997, Solid State Commun., 102, 231, 10.1016/S0038-1098(96)00711-9
1969, Can. J. Phys., 47, 1661, 10.1139/p69-211
1978, Appl. Phys. Lett., 33, 659, 10.1063/1.90455
1983, Phys. Rev. B, 27, 2587, 10.1103/PhysRevB.27.2587
1982, J. Appl. Phys., 53, 8775, 10.1063/1.330480
1983, J. Appl. Phys., 54, 4543, 10.1063/1.332655
1991, J. Appl. Phys., 69, 827, 10.1063/1.348919
1992, Appl. Phys. Lett., 60, 630, 10.1063/1.106575
1996, J. Appl. Phys., 80, 6229, 10.1063/1.363699
1994, Sov. Phys. Semicond., 28, 691
1994, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 28, 1211
1976, J. Appl. Phys., 47, 5405, 10.1063/1.322570
1986, J. Appl. Phys., 59, 2196, 10.1063/1.336358
1980, Phys. Rev. B, 21, 1311, 10.1103/PhysRevB.21.1311
1982, J. Appl. Phys., 53, 5136, 10.1063/1.331349
1984, Solid State Commun., 49, 907, 10.1016/0038-1098(84)90452-6
1991, Can. J. Phys., 69, 441, 10.1139/p91-072
1999, J. Appl. Phys., 86, 2584, 10.1063/1.371096
1991, Phys. Rev. B, 44, 10546, 10.1103/PhysRevB.44.10546
1980, Appl. Phys. Lett., 36, 978, 10.1063/1.91389
1982, Appl. Phys. Lett., 40, 423, 10.1063/1.93126
1972, Phys. Rev. Lett., 29, 1400, 10.1103/PhysRevLett.29.1400
1973, Phys. Rev. B, 8, 3794, 10.1103/PhysRevB.8.3794
1996, J. Appl. Phys., 80, 6761, 10.1063/1.363804
1979, Appl. Phys. Lett., 34, 492, 10.1063/1.90860
1980, Appl. Phys. Lett., 37, 178, 10.1063/1.91815
1980, J. Electron. Mater., 9, 459, 10.1007/BF02670862
1980, J. Appl. Phys., 51, 2277, 10.1063/1.327859
1985, J. Phys. C, 18, 2667, 10.1088/0022-3719/18/13/013
1979, Appl. Phys. Lett., 35, 772, 10.1063/1.90972
1993, Phys. Rev. B, 48, 8102, 10.1103/PhysRevB.48.8102
1993, Phys. Rev. B, 48, 8848, 10.1103/PhysRevB.48.8848
1982, Appl. Phys. Lett., 41, 476, 10.1063/1.93537
1993, Appl. Phys. Lett., 63, 1804, 10.1063/1.110668
1996, J. Appl. Phys., 80, 1239, 10.1063/1.362862
1981, Appl. Phys. Lett., 38, 450, 10.1063/1.92393
1999, J. Appl. Phys., 85, 4071, 10.1063/1.370312
1988, Appl. Phys. Lett., 52, 2124, 10.1063/1.99554
1990, Phys. Rev. B, 42, 3113, 10.1103/PhysRevB.42.3113
1979, Sov. Phys. Semicond., 13, 1194
1979, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 13, 2046
1984, Appl. Phys. Lett., 44, 341, 10.1063/1.94726
1992, Appl. Phys. Lett., 60, 2386, 10.1063/1.107005
1995, Semicond. Sci. Technol., 10, 1585, 10.1088/0268-1242/10/12/006
1989, Semicond. Sci. Technol., 4, 590, 10.1088/0268-1242/4/7/018
1995, Appl. Phys. Lett., 67, 1256, 10.1063/1.114389
1997, J. Phys. Condens. Matter, 9, 3151, 10.1088/0953-8984/9/15/008
1989, Semicond. Sci. Technol., 4, 243, 10.1088/0268-1242/4/4/014
1995, Phys. Rev. B, 52, 14682, 10.1103/PhysRevB.52.14682
1971, J. Appl. Phys., 42, 3420, 10.1063/1.1660748
1971, Solid State Commun., 9, 245, 10.1016/0038-1098(71)90127-X
1972, Phys. Rev. B, 6, 1301, 10.1103/PhysRevB.6.1301
1972, J. Electron. Mater., 1, 437, 10.1007/BF02659168
1972, Solid State Commun., 10, 353, 10.1016/0038-1098(72)90440-1
1976, Phys. Status Solidi B, 73, 633, 10.1002/pssb.2220730231
1977, Solid State Commun., 21, 437, 10.1016/0038-1098(77)91369-2
1977, Phys. Rev. B, 15, 2032
1983, Phys. Rev. B, 28, 7105, 10.1103/PhysRevB.28.7105
1988, J. Cryst. Growth, 93, 406, 10.1016/0022-0248(88)90560-X
1991, Opt. Quantum Electron., 23, S909, 10.1007/BF00624980
1993, Phys. Rev. B, 48, 11833, 10.1103/PhysRevB.48.11833
1999, J. Appl. Phys., 85, 3561, 10.1063/1.369715
1994, J. Electron. Mater., 23, 125, 10.1007/BF02655258
1988, Jpn. J. Appl. Phys., Part 2, 27, L1553, 10.1143/JJAP.27.L1553
1990, Appl. Phys. Lett., 57, 2698, 10.1063/1.104193
1991, Appl. Phys. Lett., 59, 1034, 10.1063/1.106336
1991, Appl. Phys. Lett., 58, 744, 10.1063/1.104534
1992, Appl. Phys. Lett., 61, 3169, 10.1063/1.107948
1993, Phys. Rev. B, 47, 12598, 10.1103/PhysRevB.47.12598
1995, J. Phys. Chem. Solids, 56, 349, 10.1016/0022-3697(94)00206-1
1994, Appl. Phys. Lett., 64, 2849, 10.1063/1.111445
1989, Phys. Rev. B, 39, 3178, 10.1103/PhysRevB.39.3178
1993, Appl. Phys. Lett., 62, 2369, 10.1063/1.109367
1995, IEEE J. Sel. Top. Quantum Electron., 1, 697, 10.1109/2944.401259
1989, Sov. Phys. Semicond., 23, 557
1989, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 23, 887
1996, J. Appl. Phys., 79, 439, 10.1063/1.360850
1998, IEEE J. Quantum Electron., 34, 93, 10.1109/3.655012
1996, J. Appl. Phys., 35, 537, 10.1143/JJAP.35.537
1996, Semicond. Sci. Technol., 11, 1847, 10.1088/0268-1242/11/12/014
1994, Appl. Phys. Lett., 65, 213, 10.1063/1.112676
1994, Phys. Rev. B, 50, 11190, 10.1103/PhysRevB.50.11190
1995, J. Appl. Phys., 77, 3412, 10.1063/1.358631
1999, J. Appl. Phys., 86, 2025, 10.1063/1.371003
1997, J. Electron. Mater., 26, 944, 10.1007/s11664-997-0279-1
1991, Phys. Status Solidi A, 128, K89, 10.1002/pssa.2211280237
1974, Appl. Phys. Lett., 24, 77, 10.1063/1.1655101
1989, J. Appl. Phys., 66, 3929, 10.1063/1.344019
1991, J. Appl. Phys., 69, 965, 10.1063/1.347341
2000, Sov. Phys. Semicond., 34, 405
2000, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 34, 418
1997, Appl. Phys. Lett., 71, 3251, 10.1063/1.120551
1995, Infrared Phys. Technol., 36, 755, 10.1016/1350-4495(94)00006-7
1997, Phys. Status Solidi B, 199, 403, 10.1002/1521-3951(199702)199:2<403::AID-PSSB403>3.0.CO;2-L
1969, IBM J. Res. Dev., 13, 583, 10.1147/rd.135.0583
1986, Phys. Rev. B, 34, 2638
1975, Phys. Status Solidi B, 68, K81, 10.1002/pssb.2220680106
1997, IEEE Photonics Technol. Lett., 9, 170, 10.1109/68.553079
1972, Sov. Phys. Semicond., 5, 1330
1971, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 5, 1523
1974, Phys. Status Solidi B, 65, 213, 10.1002/pssb.2220650119
1998, Appl. Phys. Lett., 73, 3132, 10.1063/1.122696
1988, Electron. Lett., 24, 1378, 10.1049/el:19880943
1993, Appl. Phys. Lett., 63, 776, 10.1063/1.109904
1996, J. Cryst. Growth, 160, 211, 10.1016/0022-0248(95)00748-2
1999, Phys. Rev. B, 59, 12272, 10.1103/PhysRevB.59.12272
1977, Sov. Phys. Semicond., 11, 913
1977, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 11, 1555
1970, J. Appl. Phys., 41, 2165, 10.1063/1.1659183
1970, Phys. Status Solidi A, 2, K141, 10.1002/pssa.19700020332
1971, Phys. Status Solidi A, 4, K143, 10.1002/pssa.2210040245
1974, Can. J. Phys., 52, 743, 10.1139/p74-101
1977, J. Appl. Phys., 48, 1607, 10.1063/1.323841
1978, Jpn. J. Appl. Phys., Part 1, 17, 2091, 10.1143/JJAP.17.2091
1985, Appl. Phys. Lett., 46, 659, 10.1063/1.95520
1987, Appl. Phys. Lett., 50, 1364, 10.1063/1.97857
1988, J. Appl. Phys., 63, 5859, 10.1063/1.340274
1994, J. Appl. Phys., 76, 504, 10.1063/1.357102
1994, Appl. Phys. Lett., 65, 2442, 10.1063/1.112701
1998, Appl. Phys. Lett., 73, 2799, 10.1063/1.122594
1987, J. Appl. Phys., 61, 2101, 10.1063/1.337966
1999, J. Appl. Phys., 86, 4706, 10.1063/1.371426
1981, Can. J. Phys., 52, 743
1995, Semicond. Sci. Technol., 10, 1177, 10.1088/0268-1242/10/8/023
1992, Appl. Phys. Lett., 60, 3256, 10.1063/1.106711
1971, J. Electrochem. Soc., 118, 805, 10.1149/1.2408169
1989, Infrared Phys., 29, 35, 10.1016/0020-0891(89)90006-7
1995, Phys. Rev. B, 52, 12039, 10.1103/PhysRevB.52.12039
1987, Appl. Phys. Lett., 50, 927, 10.1063/1.97982
1995, Cryst. Res. Technol., 30, 603, 10.1002/crat.2170300505
1997, Jpn. J. Appl. Phys., Part 1, 36, 738, 10.1143/JJAP.36.738
1993, J. Phys. D, 26, 159, 10.1088/0022-3727/26/1/026
1991, Appl. Phys. Lett., 58, 2684, 10.1063/1.104807
1992, Phys. Rev. B, 46, 1909, 10.1103/PhysRevB.46.1909
1998, J. Appl. Phys., 84, 480, 10.1063/1.368051
2000, Semicond. Sci. Technol., 15, 34, 10.1088/0268-1242/15/1/306
1987, Rev. Phys. Appl., 22, 1459, 10.1051/rphysap:0198700220110145900
1998, Solid-State Electron., 42, 2101, 10.1016/S0038-1101(98)00157-9
1997, Phys. Status Solidi A, 163, 101, 10.1002/1521-396X(199709)163:1<101::AID-PSSA101>3.0.CO;2-S
1997, Jpn. J. Appl. Phys., Part 2, 36, L757, 10.1143/JJAP.36.L757
1972, J. Appl. Phys., 43, 4075, 10.1063/1.1660876
1966, Phys. Rev., 146, 601, 10.1103/PhysRev.146.601
1976, Phys. Rev. B, 13, 5415, 10.1103/PhysRevB.13.5415
1981, J. Phys. (Paris), 42, 1151, 10.1051/jphys:019810042080115100
1996, Phys. Rev. Lett., 76, 664, 10.1103/PhysRevLett.76.664
1998, J. Appl. Phys., 84, 3696, 10.1063/1.368546
1972, J. Appl. Phys., 43, 5084, 10.1063/1.1661076
1977, Phys. Rev. B, 15, 2048, 10.1103/PhysRevB.15.2048
1994, J. Appl. Phys., 76, 1951, 10.1063/1.357653
1971, J. Appl. Phys., 42, 3201, 10.1063/1.1660707
1979, J. Phys. C, 12, 1641, 10.1088/0022-3719/12/9/007
1996, Phys. Rev. B, 53, 1990
2000, Appl. Phys. Lett., 76, 2722, 10.1063/1.126455
1979, J. Phys. C, 12, 1653, 10.1088/0022-3719/12/9/008
1982, Sov. Phys. Semicond., 16, 596
1982, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 16, 928
1987, Semicond. Sci. Technol., 2, 323, 10.1088/0268-1242/2/6/001
1988, Appl. Phys. Lett., 52, 549, 10.1063/1.99413
1988, J. Cryst. Growth, 93, 62, 10.1016/0022-0248(88)90507-6
1981, J. Electron. Mater., 10, 919, 10.1007/BF02661008
1991, Appl. Phys. Lett., 59, 423, 10.1063/1.105450
1996, J. Cryst. Growth, 162, 121, 10.1016/0022-0248(95)00950-7
1981, Jpn. J. Appl. Phys., 20, 587, 10.1143/JJAP.20.587
1988, Sov. Phys. Semicond., 22, 211
1988, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 22, 342
1990, J. Appl. Phys., 68, 4604, 10.1063/1.346169
1993, J. Cryst. Growth, 133, 38, 10.1016/0022-0248(93)90101-2
1998, Appl. Surf. Sci., 123/124, 746, 10.1016/S0169-4332(97)00549-7
1999, Phys. Rev. Lett., 82, 237, 10.1103/PhysRevLett.82.237
1989, Jpn. J. Appl. Phys., Part 2, 28, L1334, 10.1143/JJAP.28.L1334
1991, Appl. Phys. Lett., 59, 2251, 10.1063/1.106086
1995, Appl. Phys. Lett., 66, 3051, 10.1063/1.114274
1995, J. Vac. Sci. Technol. A, 13, 705, 10.1116/1.579811
1996, Appl. Phys. Lett., 69, 3390, 10.1063/1.117269
2000, Appl. Phys. Lett., 76, 291, 10.1063/1.125725
1998, Phys. Rev. B, 57, 4425, 10.1103/PhysRevB.57.4425
1998, Appl. Phys. Lett., 72, 2725, 10.1063/1.121072
1997, Jpn. J. Appl. Phys., Part 2, 36, L177, 10.1143/JJAP.36.L177
1998, Appl. Phys. Lett., 73, 1994, 10.1063/1.122346
1998, J. Appl. Phys., 84, 4452, 10.1063/1.368669
1999, Appl. Phys. Lett., 75, 2566, 10.1063/1.125079
1999, Appl. Phys. Lett., 75, 2587, 10.1063/1.125086
1999, Appl. Phys. Lett., 75, 3315, 10.1063/1.125336
2000, Appl. Phys. Lett., 76, 2832, 10.1063/1.126488
1978, J. Phys. C, 11, L143, 10.1088/0022-3719/11/4/005
1982, J. Appl. Phys., 53, 6844, 10.1063/1.329998
1983, Appl. Phys. Lett., 43, 492, 10.1063/1.94363
1986, Solid State Commun., 60, 509, 10.1016/0038-1098(86)90727-1
1987, J. Appl. Phys., 61, 4540, 10.1063/1.338387
1994, Appl. Phys. Lett., 65, 2024, 10.1063/1.112782
1998, Phys. Rev. B, 58, 1928, 10.1103/PhysRevB.58.1928
1996, MRS Internet J. Nitride Semicond. Res., 1, 8, 10.1557/S1092578300001800
2000, Sov. Phys. Semicond., 34, 35
2000, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 34, 36
1998, Phys. Status Solidi B, 205, R7, 10.1002/(SICI)1521-3951(199801)205:1<R7::AID-PSSB99997>3.0.CO;2-7
1998, Appl. Phys. Lett., 72, 1158, 10.1063/1.121033
2000, Appl. Phys. Lett., 76, 3028, 10.1063/1.126568
1997, Appl. Phys. Lett., 70, 2720, 10.1063/1.119003
1989, J. Appl. Phys., 66, 2984, 10.1063/1.344181
1995, J. Cryst. Growth, 146, 462, 10.1016/0022-0248(94)00464-1
1997, Appl. Phys. Lett., 71, 800, 10.1063/1.119650
1997, Appl. Phys. Lett., 71, 2439, 10.1063/1.120112
1998, J. Cryst. Growth, 195, 309, 10.1016/S0022-0248(98)00629-0
1995, Appl. Phys. Lett., 66, 3465, 10.1063/1.113389
1992, Jpn. J. Appl. Phys., Part 2, 31, L853, 10.1143/JJAP.31.L853
1993, Appl. Phys. Lett., 62, 1396, 10.1063/1.108691
1998, Appl. Phys. Lett., 73, 2630, 10.1063/1.122535
1993, Jpn. J. Appl. Phys., Part 1, 32, 4413, 10.1143/JJAP.32.4413
1994, Jpn. J. Appl. Phys., Part 2, 33, L1056, 10.1143/JJAP.33.L1056
1998, J. Appl. Phys., 84, 3830, 10.1063/1.368562
2000, Appl. Phys. Lett., 76, 2859, 10.1063/1.126497
1997, Appl. Phys. Lett., 70, 2861, 10.1063/1.119025
1997, Appl. Phys. Lett., 70, 2984, 10.1063/1.118764
2000, Phys. Rev. B, 61, R7861, 10.1103/PhysRevB.61.R7861
1995, Phys. Rev. B, 51, 10568, 10.1103/PhysRevB.51.10568
1995, Phys. Rev. B, 51, 4343, 10.1103/PhysRevB.51.4343
1996, Phys. Rev. B, 54, 17568, 10.1103/PhysRevB.54.17568
1997, Appl. Phys. Lett., 70, 3558, 10.1063/1.119232
1999, Phys. Rev. B, 60, R11245, 10.1103/PhysRevB.60.R11245
1999, Solid State Commun., 112, 443, 10.1016/S0038-1098(99)00361-0
1997, Appl. Phys. Lett., 70, 1608, 10.1063/1.118630
1997, Mater. Sci. Eng., B, 50, 148, 10.1016/S0921-5107(97)00153-0
1999, Appl. Phys. Lett., 74, 1254, 10.1063/1.123516
2000, Appl. Phys. Lett., 76, 3439, 10.1063/1.126671
2000, Solid State Commun., 114, 623, 10.1016/S0038-1098(00)00119-8
1998, J. Electron. Mater., 27, 484, 10.1007/s11664-998-0181-5
2000, Appl. Phys. Lett., 76, 1285, 10.1063/1.126010
1999, Phys. Rev. Lett., 82, 3312, 10.1103/PhysRevLett.82.3312
1997, Phys. Rev. B, 56, 10233, 10.1103/PhysRevB.56.10233
2000, Phys. Rev. B, 61, 7479, 10.1103/PhysRevB.61.7479
2000, Appl. Phys. Lett., 77, 1843, 10.1063/1.1311324
1999, Phys. Status Solidi B, 216, 135, 10.1002/(SICI)1521-3951(199911)216:1<135::AID-PSSB135>3.0.CO;2-#
2000, Phys. Rev. B, 61, 4433, 10.1103/PhysRevB.61.4433
1992, Appl. Phys. Lett., 60, 2540, 10.1063/1.106906
1993, Appl. Phys. Lett., 63, 208, 10.1063/1.110371
1994, J. Cryst. Growth, 145, 87, 10.1016/0022-0248(94)91033-2
1998, Jpn. J. Appl. Phys., Part 1, 37, 4680, 10.1143/JJAP.37.4680
2000, Appl. Phys. Lett., 76, 1267, 10.1063/1.126005
2000, Appl. Phys. Lett., 77, 1946, 10.1063/1.1311957
2000, Appl. Phys. Lett., 76, 3251, 10.1063/1.126597
2000, Appl. Phys. Lett., 77, 2180, 10.1063/1.1313813
1996, J. Appl. Phys., 80, 1934, 10.1063/1.362945
1997, Jpn. J. Appl. Phys., Part 2, 36, L320, 10.1143/JJAP.36.L320
1998, J. Vac. Sci. Technol. B, 16, 1293
2000, Appl. Phys. Lett., 76, 3576, 10.1063/1.126711
1978, J. Electron. Mater., 7, 639, 10.1007/BF02655439
1974, J. Electron. Mater., 3, 635, 10.1007/BF02655291
1981, J. Mater. Sci., 16, 2935, 10.1007/BF00540299
1989, Solid State Commun., 70, 33, 10.1016/0038-1098(89)90462-6
1976, Phys. Status Solidi B, 73, K135
1977, Sov. Phys. Semicond., 11, 910
1977, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 11, 1550
1999, Appl. Phys. Lett., 75, 2891, 10.1063/1.125181
1999, Phys. Rev. B, 60, 4430, 10.1103/PhysRevB.60.4430
1998, Appl. Phys. Lett., 73, 3703, 10.1063/1.122869
1999, Phys. Rev. Lett., 82, 1221, 10.1103/PhysRevLett.82.1221
1999, Appl. Phys. Lett., 75, 2578, 10.1063/1.125083
1999, Appl. Phys. Lett., 74, 1287, 10.1063/1.123526
2000, Appl. Phys. Lett., 76, 2409, 10.1063/1.126360
1980, Solid State Commun., 36, 419, 10.1016/0038-1098(80)90924-2
1981, IEEE J. Quantum Electron., 17, 139, 10.1109/JQE.1981.1071081
1985, Phys. Status Solidi B, 130, 637, 10.1002/pssb.2221300227
1981, Solid State Commun., 39, 639, 10.1016/0038-1098(81)90340-9
1988, J. Appl. Phys., 63, 5485, 10.1063/1.340373
1983, Phys. Rev. B, 28, 3632, 10.1103/PhysRevB.28.3632
1987, Solid-State Electron., 30, 217, 10.1016/0038-1101(87)90153-5
1993, J. Appl. Phys., 74, 737, 10.1063/1.355242
1993, Appl. Phys. Lett., 63, 1918, 10.1063/1.110648
1986, Appl. Phys. Lett., 48, 419, 10.1063/1.96517
1999, Appl. Phys. Lett., 75, 238, 10.1063/1.124334
2000, J. Cryst. Growth, 216, 97, 10.1016/S0022-0248(00)00363-8
1986, J. Electron. Mater., 15, 41, 10.1007/BF02649949
1991, Sov. Phys. Semicond., 25, 167
1991, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 25, 276
1997, J. Cryst. Growth, 179, 1, 10.1016/S0022-0248(97)00117-6
1999, Infrared Phys. Technol., 40, 423, 10.1016/S1350-4495(99)00030-4
1996, Mater. Sci. Eng., B, 41, 314, 10.1016/S0921-5107(96)01668-6
1991, Sov. Phys. Semicond., 25, 989
1991, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 25, 1639
1992, J. Cryst. Growth, 121, 463, 10.1016/0022-0248(92)90158-F
1999, Jpn. J. Appl. Phys., Part 1, 38, 1314, 10.1143/JJAP.38.1314
1993, Sov. Phys. Semicond., 27, 978
1993, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 27, 1777
1994, Semicond. Sci. Technol., 9, 1279, 10.1088/0268-1242/9/7/001
1997, Appl. Phys. Lett., 70, 2931, 10.1063/1.118747
1985, J. Electron. Mater., 14, 729, 10.1007/BF02654308
1990, Sov. Phys. Semicond., 24, 876
1990, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 24, 1397
2000, J. Appl. Phys., 87, 1780, 10.1063/1.372092
1992, J. Appl. Phys., 71, 6116, 10.1063/1.350419
1993, J. Appl. Phys., 73, 3958, 10.1063/1.352859
1988, Sov. J. Quantum Electron., 18, 117, 10.1070/QE1988v018n01ABEH011229
1992, Chin. Phys. Lett., 9, 53, 10.1088/0256-307X/9/1/015
1998, Thin Solid Films, 313–314, 667
1999, Superlattices Microstruct., 26, 279, 10.1006/spmi.1999.0777
1972, Sov. Phys. Semicond., 6, 77
1972, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 6, 97
1992, Jpn. J. Appl. Phys., Part 1, 31, 2514, 10.1143/JJAP.31.2514
1992, J. Electron. Mater., 21, 977, 10.1007/BF02684206
2000, Appl. Phys. Lett., 76, 1161, 10.1063/1.125970
2000, Appl. Phys. Lett., 77, 791, 10.1063/1.1306540
2000, Appl. Phys. Lett., 77, 2136, 10.1063/1.1314288
1992, Solid State Phys., 46, 1, 10.1016/S0081-1947(08)60397-5
1983, Surf. Sci., 132, 543, 10.1016/0039-6028(83)90561-7
1986, Surf. Sci., 174, 299, 10.1016/0039-6028(86)90425-5
1974, Phys. Rev. Lett., 33, 827, 10.1103/PhysRevLett.33.827
1975, Phys. Rev. Lett., 34, 1327, 10.1103/PhysRevLett.34.1327
1986, J. Appl. Phys., 59, 200, 10.1063/1.336864
1984, Appl. Phys. Lett., 45, 1237, 10.1063/1.95076
1986, Appl. Phys. Lett., 48, 541, 10.1063/1.96500
1986, Phys. Rev. B, 33, 8863, 10.1103/PhysRevB.33.8863
1987, Appl. Phys. Lett., 50, 404, 10.1063/1.98213
1995, J. Appl. Phys., 77, 4541, 10.1063/1.359415
1985, J. Appl. Phys., 57, 5340, 10.1063/1.334852
1992, J. Appl. Phys., 72, 4134, 10.1063/1.352221
1992, Superlattices Microstruct., 12, 163, 10.1016/0749-6036(92)90329-4
1992, Semicond. Sci. Technol., 7, B21, 10.1088/0268-1242/7/3B/005
1993, J. Appl. Phys., 73, 8480, 10.1063/1.353422
1993, Appl. Phys. Lett., 62, 2813, 10.1063/1.109218
1994, J. Appl. Phys., 75, 1010, 10.1063/1.356507
1994, Phys. Rev. B, 49, 10444, 10.1103/PhysRevB.49.10444
1995, J. Cryst. Growth, 150, 49, 10.1016/0022-0248(95)80179-G
1995, Phys. Rev. B, 52, 14693, 10.1103/PhysRevB.52.14693
1996, Semicond. Sci. Technol., 11, 766, 10.1088/0268-1242/11/5/019
1997, Appl. Phys. Lett., 71, 2292, 10.1063/1.120053
1997, Phys. Rev. B, 56, 2026, 10.1103/PhysRevB.56.2026
1999, Sov. Phys. Semicond., 33, 858
1999, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 33, 940
2000, Solid State Commun., 113, 201
1988, Phys. Rev. B, 37, 4528, 10.1103/PhysRevB.37.4528
1990, Phys. Rev. B, 41, 2813, 10.1103/PhysRevB.41.2813
1998, Appl. Phys. Lett., 72, 2011, 10.1063/1.121249
1988, Phys. Rev. B, 38, 7723, 10.1103/PhysRevB.38.7723
1987, Phys. Rev. B, 35, 6182, 10.1103/PhysRevB.35.6182
1990, Phys. Rev. B, 41, 2832, 10.1103/PhysRevB.41.2832
1992, J. Phys.: Condens. Matter, 4, 8083
1998, Phys. Rev. B, 58, 7864
1984, J. Appl. Phys., 55, 3176, 10.1063/1.333348
1991, Phys. Rev. B, 43, 2263, 10.1103/PhysRevB.43.2263
1993, Appl. Phys. Lett., 62, 291, 10.1063/1.108994
1993, Appl. Surf. Sci., 63, 172, 10.1016/0169-4332(93)90084-O
1993, J. Appl. Phys., 74, 1437, 10.1063/1.354904
1994, J. Appl. Phys., 76, 1077, 10.1063/1.357826
1998, Superlattices Microstruct., 23, 253, 10.1006/spmi.1996.0310
1993, Phys. Rev. B, 47, 6439, 10.1103/PhysRevB.47.6439
1994, J. Appl. Phys., 76, 2893, 10.1063/1.357527
1991, J. Appl. Phys., 69, 372, 10.1063/1.347724
1999, J. Appl. Phys., 85, 4071, 10.1063/1.370312
1991, Appl. Phys. Lett., 58, 1759, 10.1063/1.105082
1997, Phys. Rev. B, 55, 2274, 10.1103/PhysRevB.55.2274
1997, J. Phys.: Condens. Matter, 9, 439
1991, J. Appl. Phys., 69, 342, 10.1063/1.347718
1996, J. Electron. Mater., 26, L6
1992, Appl. Phys. Lett., 60, 1241, 10.1063/1.107418
1992, Phys. Rev. B, 45, 6259
1987, Phys. Rev. B, 35, 8154, 10.1103/PhysRevB.35.8154
1990, J. Vac. Sci. Technol. B, 8, 768, 10.1116/1.584963
1988, Appl. Phys. Lett., 53, 1620, 10.1063/1.99930
1992, Semicond. Sci. Technol., 7, 524, 10.1088/0268-1242/7/4/014
1999, J. Appl. Phys., 85, 4184, 10.1063/1.370329
1993, Solid State Commun., 86, 1, 10.1016/0038-1098(93)90236-G
1987, Appl. Phys. Lett., 51, 1632, 10.1063/1.98578
1982, J. Vac. Sci. Technol., 20, 705, 10.1116/1.571635
1989, Appl. Phys. Lett., 54, 1878, 10.1063/1.101246
1989, J. Vac. Sci. Technol. B, 7, 815, 10.1116/1.584606
1991, Phys. Rev. B, 44, 1734, 10.1103/PhysRevB.44.1734
1995, J. Vac. Sci. Technol. B, 13, 1728
1987, Phys. Rev. B, 36, 8165, 10.1103/PhysRevB.36.8165
1991, Phys. Status Solidi A, 124, K111, 10.1002/pssa.2211240233
1991, Appl. Phys. Lett., 58, 1047, 10.1063/1.104419
1991, Appl. Phys. Lett., 59, 1329, 10.1063/1.105490
1991, Phys. Rev. B, 44, 3144
1991, Solid State Commun., 79, 889, 10.1016/0038-1098(91)90437-Z
1991, J. Appl. Phys., 70, 7537, 10.1063/1.349706
1993, Semicond. Sci. Technol., 8, 477, 10.1088/0268-1242/8/3/030
1994, Appl. Phys. Lett., 65, 2728, 10.1063/1.112549
1994, Phys. Rev. B, 50, 18147, 10.1103/PhysRevB.50.18147
1995, Semicond. Sci. Technol., 10, 127, 10.1088/0268-1242/10/2/002
1995, Phys. Rev. B, 51, 13274, 10.1103/PhysRevB.51.13274
1996, J. Appl. Phys., 79, 7775, 10.1063/1.362383
1996, J. Appl. Phys., 79, 8121, 10.1063/1.362372
1996, Phys. Rev. B, 54, 13820, 10.1103/PhysRevB.54.13820
1997, Phys. Rev. B, 55, 2406
1997, Mater. Sci. Eng., B, 44, 147, 10.1016/S0921-5107(96)01801-6
1997, J. Electron. Mater., 26, 922, 10.1007/s11664-997-0275-5
1998, J. Appl. Phys., 83, 2093, 10.1063/1.366942
2000, Appl. Phys. Lett., 77, 776, 10.1063/1.1306660
1999, Phys. Rev. B, 59, 5056, 10.1103/PhysRevB.59.5056
1994, Phys. Rev. B, 50, 1628, 10.1103/PhysRevB.50.1628
1999, Phys. Rev. B, 59, 10315, 10.1103/PhysRevB.59.10315
1998, J. Vac. Sci. Technol. A, 16, 805, 10.1116/1.581062
2000, Appl. Phys. Lett., 76, 1146, 10.1063/1.125965
2000, Appl. Phys. Lett., 76, 2571, 10.1063/1.126411
1991, Phys. Rev. B, 43, 2050
1991, Appl. Phys. Lett., 58, 842, 10.1063/1.104507
1985, Phys. Rev. B, 32, 6968, 10.1103/PhysRevB.32.6968
1988, Phys. Rev. B, 38, 6305, 10.1103/PhysRevB.38.6305
1991, J. Appl. Phys., 70, 405, 10.1063/1.350289
1991, J. Electron. Mater., 20, 1117, 10.1007/BF03030218
1994, J. Appl. Phys., 75, 4673, 10.1063/1.355920
1996, J. Appl. Phys., 80, 846, 10.1063/1.362921
1998, J. Cryst. Growth, 188, 332, 10.1016/S0022-0248(98)00069-4
1998, Jpn. J. Appl. Phys., Part 1, 37, 3915, 10.1143/JJAP.37.3915
1993, Semicond. Sci. Technol., 8, 1666, 10.1088/0268-1242/8/8/030
1995, Nuovo Cimento D, 17, 1367, 10.1007/BF02457211
1992, Appl. Phys. Lett., 61, 2317, 10.1063/1.108229
1999, Appl. Phys. Lett., 74, 410, 10.1063/1.123044
2000, J. Cryst. Growth, 209, 540
1989, J. Cryst. Growth, 95, 363, 10.1016/0022-0248(89)90419-3
1986, Jpn. J. Appl. Phys., Part 2, 25, L127, 10.1143/JJAP.25.L127
1987, Appl. Phys. Lett., 50, 906, 10.1063/1.98028
1987, J. Appl. Phys., 61, 643, 10.1063/1.338931
1992, Appl. Phys. Lett., 60, 474, 10.1063/1.106639
1993, Semicond. Sci. Technol., 8, 2092, 10.1088/0268-1242/8/12/010
1990, Appl. Phys. Lett., 56, 833, 10.1063/1.102677
1989, J. Appl. Phys., 65, 4898, 10.1063/1.343205
1991, Appl. Phys. Lett., 58, 744, 10.1063/1.104534
1992, Phys. Rev. B, 46, 1886
1991, Appl. Phys. Lett., 58, 616, 10.1063/1.104574
1993, Phys. Rev. B, 47, 6465, 10.1103/PhysRevB.47.6465
1996, J. Appl. Phys., 79, 2162, 10.1063/1.361077
1996, Appl. Phys. Lett., 69, 1288, 10.1063/1.117394
1996, Appl. Phys. Lett., 69, 3022, 10.1063/1.116826
1995, Appl. Phys. Lett., 67, 1718, 10.1063/1.115027
1997, J. Electron. Mater., 26, 944, 10.1007/s11664-997-0279-1
1997, J. Appl. Phys., 82, 3374, 10.1063/1.365650
1998, J. Appl. Phys., 84, 2127, 10.1063/1.368357
1992, J. Vac. Sci. Technol. B, 10, 1754, 10.1116/1.586235
1987, J. Appl. Phys., 61, 1713, 10.1063/1.338067
1993, Appl. Phys. Lett., 63, 1240, 10.1063/1.110772
1995, Appl. Phys. Lett., 66, 619, 10.1063/1.114032
1998, Appl. Phys. Lett., 73, 1098, 10.1063/1.122096
1993, Phys. Rev. B, 48, 18031, 10.1103/PhysRevB.48.18031
1995, J. Phys. Chem. Solids, 56, 423, 10.1016/0022-3697(94)00216-9
1995, Appl. Phys. Lett., 66, 2852, 10.1063/1.113451
1996, Mater. Sci. Eng., B, 39, 79, 10.1016/0921-5107(95)01443-8
1996, J. Appl. Phys., 80, 4592, 10.1063/1.363829
1992, Jpn. J. Appl. Phys., Part 2, 31, L1161, 10.1143/JJAP.31.L1161
1993, J. Vac. Sci. Technol. B, 11, 1617, 10.1116/1.586491
1997, J. Appl. Phys., 81, 1417, 10.1063/1.363899
1997, J. Phys.: Condens. Matter, 9, L279
1997, Z. Phys. B: Condens. Matter, 102, 61
1983, Phys. Rev. B, 28, 1944, 10.1103/PhysRevB.28.1944
1984, Appl. Phys. Lett., 45, 749, 10.1063/1.95385
1988, Phys. Rev. B, 37, 4664, 10.1103/PhysRevB.37.4664
1992, Phys. Rev. B, 45, 4312
1997, Appl. Phys. Lett., 70, 3449, 10.1063/1.119198
1991, Jpn. J. Appl. Phys., Part 2, 30, L1631, 10.1143/JJAP.30.L1631
1993, Jpn. J. Appl. Phys., Part 1, 32, 544
1993, Appl. Phys. Lett., 62, 2078, 10.1063/1.109484
1994, J. Cryst. Growth, 145, 746, 10.1016/0022-0248(94)91137-1
1996, Phys. Rev. B, 54, 5691, 10.1103/PhysRevB.54.5691
1997, Surf. Sci., 387, 371, 10.1016/S0039-6028(97)00401-9
1998, J. Phys.: Condens. Matter, 10, 577
1984, Phys. Rev. B, 30, 4874, 10.1103/PhysRevB.30.4874
1977, J. Vac. Sci. Technol., 14, 1016, 10.1116/1.569312
1983, J. Appl. Phys., 54, 2522, 10.1063/1.332320
1993, J. Appl. Phys., 74, 2112, 10.1063/1.354734
1993, Phys. Rev. B, 47, 16299, 10.1103/PhysRevB.47.16299
1985, Phys. Rev. B, 32, 5303, 10.1103/PhysRevB.32.5303
1986, Appl. Phys. Lett., 49, 1037, 10.1063/1.97464
1987, Appl. Phys. Lett., 50, 1763
1987, Appl. Phys. Lett., 50, 1763
1987, Solid State Commun., 61, 703, 10.1016/0038-1098(87)90720-4
1988, Phys. Rev. B, 37, 6278, 10.1103/PhysRevB.37.6278
1992, Phys. Rev. B, 46, 13379, 10.1103/PhysRevB.46.13379
1989, Superlattices Microstruct., 5, 591, 10.1016/0749-6036(89)90392-3
1990, J. Appl. Phys., 68, 3451, 10.1063/1.346355
1996, Appl. Phys. Lett., 68, 54, 10.1063/1.116755
1991, J. Appl. Phys., 69, 3154, 10.1063/1.348584
1992, Solid State Commun., 81, 961, 10.1016/0038-1098(92)90877-C
1991, J. Appl. Phys., 70, 4342, 10.1063/1.349115
1996, Appl. Phys. Lett., 69, 3218, 10.1063/1.118015
1992, Phys. Rev. B, 45, 1317, 10.1103/PhysRevB.45.1317
1992, J. Vac. Sci. Technol. B, 10, 1744, 10.1116/1.586234
1993, J. Vac. Sci. Technol. B, 11, 1693, 10.1116/1.586506
1993, Semicond. Sci. Technol., 8, S106, 10.1088/0268-1242/8/1S/024
1993, Semicond. Sci. Technol., 8, S121, 10.1088/0268-1242/8/1S/027
1993, Semicond. Sci. Technol., 8, S102, 10.1088/0268-1242/8/1S/023
1995, Phys. Rev. B, 51, 1729, 10.1103/PhysRevB.51.1729
1996, Semicond. Sci. Technol., 11, 823, 10.1088/0268-1242/11/5/001
1995, Appl. Phys. Lett., 66, 2981, 10.1063/1.114250
1987, J. Appl. Phys., 61, 5337, 10.1063/1.338270
1986, Appl. Phys. Lett., 49, 41, 10.1063/1.97077
1989, Solid State Commun., 72, 795, 10.1016/0038-1098(89)90911-3
1996, J. Appl. Phys., 79, 8379, 10.1063/1.362557
1978, Solid State Commun., 27, 935, 10.1016/0038-1098(78)91010-4
1981, J. Vac. Sci. Technol., 19, 589, 10.1116/1.571134
1985, J. Appl. Phys., 58, 3933, 10.1063/1.335566
1990, Appl. Phys. Lett., 56, 1418, 10.1063/1.102486
1990, Appl. Phys. Lett., 57, 801, 10.1063/1.103425
1991, Appl. Phys. Lett., 59, 846, 10.1063/1.105255
1992, Appl. Phys. Lett., 61, 207, 10.1063/1.108219
1993, Semicond. Sci. Technol., 8, S106, 10.1088/0268-1242/8/1S/024
1994, Solid-State Electron., 37, 733, 10.1016/0038-1101(94)90288-7
1995, Appl. Phys. Lett., 66, 1921, 10.1063/1.113277
1995, Appl. Phys. Lett., 67, 3700, 10.1063/1.115354
1995, Inst. Phys. Conf. Ser., 144, 219
1995, Electron. Lett., 31, 275, 10.1049/el:19950221
1996, J. Appl. Phys., 80, 1116, 10.1063/1.362849
1996, Appl. Phys. Lett., 68, 2135, 10.1063/1.115609
1997, Appl. Phys. Lett., 71, 1403, 10.1063/1.119906
1997, Phys. Rev. B, 55, 4477
1997, Appl. Phys. Lett., 71, 3251, 10.1063/1.120551
1997, IEEE J. Quantum Electron., 33, 1403, 10.1109/3.605563
1997, Appl. Phys. Lett., 70, 1125, 10.1063/1.118504
1997, IEEE Photonics Technol. Lett., 9, 1573, 10.1109/68.643265
1997, Appl. Phys. Lett., 71, 3281, 10.1063/1.120313
1997, Appl. Phys. Lett., 71, 3764, 10.1063/1.120499
1997, IEEE Photonics Technol. Lett., 9, 735
1997, Appl. Phys. Lett., 71, 3483, 10.1063/1.120366
1998, Appl. Phys. Lett., 72, 3434, 10.1063/1.121657
1999, Phys. Rev. B, 59, 5745, 10.1103/PhysRevB.59.5745
1999, J. Appl. Phys., 86, 1796, 10.1063/1.370971
1998, Appl. Phys. Lett., 73, 3833, 10.1063/1.122909
1999, Appl. Phys. Lett., 74, 1075, 10.1063/1.123486
1999, Electron. Lett., 35, 1743, 10.1049/el:19991204
1998, Electron. Lett., 34, 270, 10.1049/el:19981221
1989, Appl. Phys. Lett., 54, 1893, 10.1063/1.101233
1999, Appl. Phys. Lett., 74, 1135, 10.1063/1.123466
2000, J. Appl. Phys., 87, 8192, 10.1063/1.373517
1992, J. Vac. Sci. Technol. B, 10, 1773, 10.1116/1.586239
1993, Appl. Phys. Lett., 63, 1795, 10.1063/1.110665
1996, Phys. Rev. B, 53, 10852, 10.1103/PhysRevB.53.10852
1997, Phys. Rev. B, 55, 13080, 10.1103/PhysRevB.55.13080
1988, Appl. Phys. Lett., 53, 216, 10.1063/1.100135
1991, Phys. Rev. B, 44, 1143, 10.1103/PhysRevB.44.1143
1996, Appl. Phys. Lett., 69, 2501, 10.1063/1.117720
1997, Phys. Rev. B, 55, 4589
1998, Appl. Phys. Lett., 72, 3473, 10.1063/1.121670
1994, Appl. Phys. Lett., 64, 812, 10.1063/1.111022
1995, Appl. Phys. Lett., 66, 364, 10.1063/1.114214
1995, Appl. Phys. Lett., 66, 118, 10.1063/1.113535
1997, Phys. Rev. B, 56, 3621, 10.1103/PhysRevB.56.3621
1993, Physica B, 184, 106, 10.1016/0921-4526(93)90330-9
1993, J. Vac. Sci. Technol. B, 11, 1652, 10.1116/1.586497
1996, Semicond. Sci. Technol., 11, 1185, 10.1088/0268-1242/11/8/012
1996, Appl. Phys. Lett., 69, 2237, 10.1063/1.117139
2000, Appl. Phys. Lett., 76, 3905, 10.1063/1.126816
1984, Solid State Commun., 49, 663, 10.1016/0038-1098(84)90216-3
1995, Appl. Phys. Lett., 66, 1785, 10.1063/1.113321
1996, Appl. Phys. Lett., 69, 3740, 10.1063/1.117207
1993, Phys. Rev. B, 47, 7588, 10.1103/PhysRevB.47.7588
1979, Appl. Phys. Lett., 34, 862, 10.1063/1.90702
1984, Appl. Phys. Lett., 45, 1199, 10.1063/1.95096
1990, Semicond. Sci. Technol., 5, 918, 10.1088/0268-1242/5/8/021
1997, Mater. Sci. Technol., 13, 971, 10.1179/mst.1997.13.11.971
1998, J. Appl. Phys., 83, 5852, 10.1063/1.367443
1998, IEEE J. Quantum Electron., 34, 1873, 10.1109/3.720221
1999, Appl. Phys. Lett., 74, 717, 10.1063/1.123101
1999, Appl. Phys. Lett., 74, 3495, 10.1063/1.124141
1993, Solid-State Electron., 36, 649, 10.1016/0038-1101(93)90279-Y
1993, J. Appl. Phys., 73, 2360, 10.1063/1.353114
1993, Solid-State Electron., 36, 1371, 10.1016/0038-1101(93)90044-Q
1990, Superlattices Microstruct., 8, 375, 10.1016/0749-6036(90)90334-4
1995, Solid-State Electron., 38, 525, 10.1016/0038-1101(94)00111-R
1995, Appl. Phys. Lett., 67, 3432, 10.1063/1.115270
1996, J. Phys.: Condens. Matter, 8, 4751
1994, Phys. Rev. B, 49, 4710, 10.1103/PhysRevB.49.4710
1997, Appl. Phys. Lett., 70, 2407, 10.1063/1.118886
1991, Appl. Phys. Lett., 58, 2375, 10.1063/1.104875
1995, J. Vac. Sci. Technol. B, 13, 1582, 10.1116/1.588191
1999, Jpn. J. Appl. Phys., Part 1, 38, 5003, 10.1143/JJAP.38.5003
2000, Appl. Phys. Lett., 76, 2862, 10.1063/1.126498
2000, J. Appl. Phys., 88, 4153, 10.1063/1.1290449
1986, J. Vac. Sci. Technol. B, 4, 1068, 10.1116/1.583544
1999, Surf. Sci., 424, 232, 10.1016/S0039-6028(98)00942-X
1994, Appl. Phys. Lett., 65, 2211, 10.1063/1.112764
1995, Appl. Phys. Lett., 67, 3322, 10.1063/1.115234
1996, Appl. Phys. Lett., 68, 2541, 10.1063/1.116177
1996, Appl. Phys. Lett., 68, 2879, 10.1063/1.116355
1998, Mater. Res. Soc. Symp. Proc., 482, 775
1998, J. Appl. Phys., 84, 2086, 10.1063/1.368355
1999, J. Vac. Sci. Technol. B, 17, 1674, 10.1116/1.590808
1994, J. Vac. Sci. Technol. B, 12, 2470, 10.1116/1.587786
1996, Phys. Rev. B, 53, 1377, 10.1103/PhysRevB.53.1377
1996, Mater. Res. Soc. Symp. Proc., 395, 515
1996, J. Appl. Phys., 80, 2918, 10.1063/1.363146
1996, J. Appl. Phys., 80, 5076, 10.1063/1.363486
1998, Mater. Res. Soc. Symp. Proc., 482, 911
1997, Phys. Rev. B, 55, R7323, 10.1103/PhysRevB.55.R7323
1998, Phys. Rev. B, 57, R9427, 10.1103/PhysRevB.57.R9427
