Analysis of electromigration phenomenon in thick-film and LTCC structures at elevated temperature

Walter de Gruyter GmbH - Tập 32 - Trang 247-251 - 2014
Damian Nowak1, Andrzej Stafiniak1, Andrzej Dziedzic1
1Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wrocław, Poland

Tóm tắt

Studies on electromigration phenomenon in thick-film structures on alumina and LTCC substrates are presented in this paper. The effects of storage of Au and Ag electrode patterns in temperature range up to 300 °C under voltage bias were examined. The leakage characteristics of electrodes with 100 μm spacing at 50 V dc bias as a function of time and temperature are presented and analyzed. Scanning electron microscope (SEM) equipped with the energy-dispersive X-ray spectroscopy (EDX) detector was applied for determination of metal ions transport. Test structures with Au-based conductive material are much more resistant to electromigration than Ag-based layers.

Tài liệu tham khảo

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