Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

IEEE Electron Device Letters - Tập 22 Số 5 - Trang 230-232 - 2001
J.A. Babcock1, S. Balster2, A. Pinto2, C. Dirnecker2, Philipp Steinmann2, R. Jumpertz2, Badih El-Kareh2
1Mixed-Signal-Products Process Dev. Group, Texas Instrum. Deutschland, Freising, Germany
2[Mixed-Signal-Products Process Development Group, Texas Instruments Deutschland GmbH, Freising, Germany]

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