An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN–AlGaN–AlN quantum wells: Towards all-optical devices and systems

Microelectronics Journal - Tập 38 - Trang 900-904 - 2007
A. Rostami1, H. Baghban1, H. Rasooli Saghai2
1Photonics and Nanocrystal Research Laboratory, Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz 51664, Iran
2Department of Electrical Engineering, Islamic Azad University of Tabriz, Tabriz, Iran

Tài liệu tham khảo

Paiella, 2006 Gmachl, 2000, Intersubband absorption at λ∼1.55μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers, Appl. Phys. Lett., 77, 3722, 10.1063/1.1332108 Iizuka, 2002, Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy, Appl. Phys. Lett., 81, 1803, 10.1063/1.1505116 Iizuka, 2005, Sub-picosecond all-optical gate utilizing, Opt. Express, 13, 3835, 10.1364/OPEX.13.003835 Neogi, 2001, Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs–AlAsSb–InP coupled double-quantum-well structures, IEEE J. Sel. Top. Quantum Electron., 7, 710, 10.1109/2944.974243 Jingliang, 2004, Studies of the second-order nonlinear optical susceptibilities of GaN/AlGaN quantum well, Physica E, 23, 70, 10.1016/j.physe.2004.01.004 Shen, 1984 Ambacher, 2000, J. Appl. Phys., 87, 334, 10.1063/1.371866 Vurgaftman, 2001, Band parameters for III–V compound semiconductors and their alloys, J. Appl. Phys., 89, 5815, 10.1063/1.1368156 Strite, 1992, GaN, AlN, and InN: a review, J. Vac. Sci. Technol. B, 10, 1237, 10.1116/1.585897 Lee, 1999, The band gap bowing of AlxGa1−xN alloys, Appl. Phys. Lett., 74, 3344, 10.1063/1.123339