An investigation of the spatial location of proton-induced traps in SiGe HBTs

IEEE Transactions on Nuclear Science - Tập 45 Số 6 - Trang 2424-2429 - 1998
J. Roldán1, Guofu Niu, W.E. Ansley, John D. Cressler2, S.D. Clark3, D. Ahlgren4
1Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
2Auburn University AL, United States
3Naval Surface Warfare Center Crane, IN, United States
4IBM Microelectronics, Hopewell Junction, NY (United States)

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Tài liệu tham khảo

foster, 1997, radiation effects test facility at the indiana university cyclotron facility, ICAARI Proceedings

siedle, 1993, Handbook of Radiation Effects

10.1109/16.368041

10.1109/23.124115

10.1109/23.556909

10.1109/23.488750

vanhellemont, 1992, 1 mev electron irradiation induced degradation of boron-doped strained <formula><tex>${\rm si_{1-x}ge_x}$</tex></formula> layers, Thin Solid Films, 222, 166, 10.1016/0040-6090(92)90061-F

10.1109/23.658970

10.1051/jp4:1998323

10.1109/16.368039

roldan, 1997, the effects of neutron irradiation on the cryogenic properties of uhv/cvd sige hbts, Proceedings of the Electrochemical Society Symposium on Low-Temperature Electronics and High-Temperature Superconductivity, 97 2, 246

10.1109/6.367973

10.1063/1.96673

1997, MEDICI 2-D Device Simulator