Advanced SOI MOSFETs with buried alumina and ground plane: self-heating and short-channel effects

Solid-State Electronics - Tập 48 - Trang 907-917 - 2004
K. Oshima1,2,3, S. Cristoloveanu1, B. Guillaumot4, H. Iwai3, S. Deleonibus2
1IMEP (UMR CNRS-INPG-UJF), ENSERG, BP257, 23 rue des Martyrs, F38016 Grenoble Cedex 1, France
2CEA-LETI/SRD/DTS, 17 rue des Martyrs, F38054 Grenoble Cedex 9, France
3Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama-shi 226-8502, Japan
4STMicroelectronics, 850 rue Jean Monnet, F38926 Crolles Cedex, France

Tài liệu tham khảo

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