Achievement of p-type doping in gallium nitride by beryllium implantation
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 511-514
Tóm tắt
For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas and then in pure nitrogen. The sheet concentration of the holes was estimated to be about 2 /spl times/ 10/sup 13/ cm/sup -2/ from Hall measurements. The structures of the samples annealed under different conditions were analyzed using high resolution X-ray diffractometry and Rutherford back scattering. The results showed that the crystal structure of the implanted region was almost restored after annealing, except for possibly some point defects.
Từ khóa
#Doping #III-V semiconductor materials #Gallium nitride #Annealing #Mass spectroscopy #X-ray diffraction #X-ray scattering #Temperature #Crystallization #Hall effectTài liệu tham khảo
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10.1143/JJAP.33.L699
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