A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

Solid-State Electronics - Tập 34 Số 5 - Trang 453-465 - 1991
S.C. Jain1, D.J. Roulston1
1Department of Electrical and Computer Engineering, University of Waterloo, Ontario, Canada N2L 3G1

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