A silicon quantum wire transistor with one-dimensional subband effects
Tài liệu tham khảo
Morimoto K, Hirai Y, Yuki K, Inoue K, Niwa M, Yasui J. One-dimensional conduction of ultra fine silicon quantum wires. 1993 International Conference on Solid State Devices and Materials, 1993. p. 344–6
Tang, 1992, Quantized conductance in a long silicon inversion wire, Phys Rev B, 45, 13799, 10.1103/PhysRevB.45.13799
Wharam, 1988, One-dimensional transport and the quantization of the ballistic resistance, Phys C: Solid State Phys, 21, L209, 10.1088/0022-3719/21/8/002
Baie X, Colinge JP, Bayot V, Grivei E. Quantum wire effects in thin and narrow SOI MOSFETs. 1995 IEEE International SOI Conference, 1995. p. 66–7
Nakajima Y, Takahashi Y, Horiguchi S, Iwadate K, Namatsu H, Kurihara K, Tabe M. Quantized conductance of a silicon wire fabricated using SIMOX technology. 1994 International Conference on Solid State Devices and Materials, 1994. p. 538–40
Morimoto K, Hirai Y, Yuki K, Morita K. Fabrication and transport properties of gate-all-around silicon quantum wire transistor. 1995 International Conference on Solid State Devices and Materials, 1995. p. 339–41
Gao, 1990, One-dimensional effects in the conductance of multiple quantum wires in Si metal-oxide-semiconductor field-effect transistors, Phys Rev B, 41, 12315, 10.1103/PhysRevB.41.12315
Bagwell, 1989, Landauer’s conductance formula and its generalization to finite voltages, Phys Rev B, 40, 1456, 10.1103/PhysRevB.40.1456
Nishiguchi, 2000, Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate, Appl Phys Lett, 76, 2922, 10.1063/1.126517
