A self-timed dynamic sensing scheme for 5V only multi-Mb flash E/sup 2/PROMs

Symposium 1989 on VLSI Circuits - 1989
Kobayashi1, Nakayama1, Hayashikoshi1, Miyawaki1, Terada1, Arima1, Matsukawa1, Yoshihara1
1LSI R & D Laboratory, Mitsubishi Electric Corporation Limited, Itami, Japan

Tóm tắt

In recent years, several types of flash E'PROM have been proposed to enhance the density of electrically alterable non-volatile memories. However, shrinking the memory cell causes the reduction of the cell current, 80 that a sensitive sensing scheme has been required, which replaces the conventional current sensing. A simultaneous multi-bit reading is also necessary for L high speed serial and page mode reading.

Từ khóa

#Sensors #Flip-flops #Timing #Electric potential #Current measurement #Size measurement #Semiconductor device measurement

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Symposium 1989 on VLSI Circuits

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