A resonant tunneling permeable base transistor with Al-free tunneling barriers
60th DRC. Conference Digest Device Research Conference - Trang 155-156
Tóm tắt
Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described.
Từ khóa
#Resonant tunneling devices #Epitaxial growth #Epitaxial layers #Solid state circuits #Semiconductor diodes #Electron devices #Frequency estimation #Physics #Nanoscale devices #GratingsTài liệu tham khảo
bozler, 1980, fabrication and numerical simulation of the permeable base transistor, IEEE Transactions on Electron Devices, 27, 1128, 10.1109/T-ED.1980.19996
wernersson, 2002, Accepted for publication in Appl Phys Lett, 80
lind, 2002, accepted for publication in IEEE Trans Electron Devices
10.1016/S0038-1101(99)00074-X