A novel approach for the growth of μc-Si at a high rate over 3 nm/s
Tài liệu tham khảo
Guo, 1998, Jpn. J. Appl. Phys., 37, L1116, 10.1143/JJAP.37.L1116
M. Fukawa, S. Suzuki, L. Guo, M. Kondo, A. Matsuda, Tech. Digest of PVSEC-11, Sapporo, Japan, 1999, pp. 945
Kondo, 2000, J. Non-Cryst. Solids, 266–269, 84, 10.1016/S0022-3093(99)00744-9
Fukawa, 2001, Sol. Energ. Mat. Sol. C., 66, 217, 10.1016/S0927-0248(00)00176-8
S. Suzuki, M. Kondo, A. Matsuda, Tech. Digest of PVSEC-12, Jeju, Korea, 2001, pp. 559
Conde, 1997, IEEE Trans. Plasma Sci., 25, 548, 10.1109/27.640664