A novel approach for the growth of μc-Si at a high rate over 3 nm/s

Thin Solid Films - Tập 427 - Trang 33-36 - 2003
M. Tanda1,2, M. Kondo1, A. Matsuda1
1National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
2Fuji Electric Corporate Research and Development, Ltd, 2-2-1, Nagasaka, Yokosuka, Kanagawa 240-0194 Japan

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