A novel CDM-like discharge effect during human body model (HBM) ESD stress
Tóm tắt
Interactions between ESD protection devices and other components of a chip can lead to complex and not easily anticipated discharge behaviour. Triggering of a protection MOSFET is equivalent to the closing of a fast switch and can cause substantial transient discharge currents. The peak value of this current depends on the chip capacitance, resistance, properties of the protection clamp, etc. Careful optimization of the protection circuit is therefore necessary to avoid current overstress and circuit failure.
Từ khóa
#Humans #Biological system modeling #Electrostatic discharge #Stress #Protection #Switches #MOSFET circuits #Capacitance #Immune system #ClampsTài liệu tham khảo
axelrad, 0, Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation SISPAD2001
1998, SEQUOIA Device Designer User's Guide SEQUOIA Design Systems
lee, 2000, Chip-Level Simulation for CDM Failures in Multi-Power ICs EOS/ESD, 456
10.1109/VLSIT.2002.1015461
vassilev, 2001, Analysis and improved compact modeling of the breakdown behavior of sub-0.25 micron ESD protection ggnmos devices, ESD/EOS, 62
richier, 2000, Investigation on different ESD protection strategies devoted to 3.3V RF applications (2Ghz) in a 0.18?m CMOS process, ESD/EOS, 251