A non-quasi-static small-signal model of the four-terminal MOSFET for radio and microwave frequencies
ICCSC'02. 1st IEEE International Conference on Circuits and Systems for Communications. Proceedings (IEEE Cat. No.02EX605) - Trang 316-319
Tóm tắt
An original, fully analytical non-quasi-static (NQS) small-signal model of the MOS transistor is proposed for analysis and simulation of radio and microwave frequency circuits. We report results of frequency-domain analysis, the main features and experimental verification of the novel NQS four-terminal model derived in the time-domain (Kordalski, Int. Conf. on Signals and Electron. Sys., 2000). The carrier velocity saturation effect is taken into account in this model. The model is computationally efficient, physically consistent and can be applied to an arbitrary configuration of device operation.
Từ khóa
#MOSFET circuits #Microwave frequencies #Analytical models #Circuit simulation #Microwave circuits #Frequency domain analysis #Time domain analysis #Electrons #Computational modeling #Physics computingTài liệu tham khảo
10.1109/16.704377
10.1109/4.748178
10.1007/978-3-7091-8752-4
10.1109/16.662788
kordalski, 2000, An Injection Non-Quasi-Static Small-Signal MOSFET Model, International Conference on Signals and Electronic Systems
yamaguchi, 1979, field-dependent mobility model for two-dimensional numerical analysis of mosfet's, IEEE Transactions on Electron Devices, 26, 1068, 10.1109/T-ED.1979.19547
10.1016/S0038-1101(00)00040-X
10.1109/4.823444